BCP68 - описание и поиск аналогов

DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D087 BCP68 NPN medium power transistor; 20 V, 1 A Product data sheet 2003 Nov 25 Supersedes data of 1999 Apr 08 NXP Semiconductors Product data sheet NPN medium power transistor; BCP68 20 V, 1 A FEATURES QUICK REFERENCE DATA High current SYMBOL PARAMETER MIN. MAX. UNIT Two current gain selections VCEO collector-

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BCP68 NPN medium power transistor 1999 Apr 08 Product specification Supersedes data of 1997 Apr 09 Philips Semiconductors Product specification NPN medium power transistor BCP68 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 20 V). 1 base 2, 4 collector APPLICATIONS 3 emitter Ge

BCP68 NPN General Purpose Amplifier 4 This device is designed for general purpose medium power amplifiers. Sourced from process 37. 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 20 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Colle

BCP68; BC868; BC68PA 20 V, 2 A NPN medium power transistors Rev. 8 18 October 2011 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package PNP complement Nexperia JEITA JEDEC BCP68 SOT223 SC-73 - BCP69 BC868 SOT89 SC-62 TO-243 BC869 BC68PA SO

NPN Silicon AF Transistor BCP 68 For general AF application High collector current High current gain Low collector-emitter saturation voltage Complementary type BCP 69 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 4 BCP 68 BCP 68 Q62702-C2126 B C E C SOT-223 BCP 68-10 BCP 68-10 Q62702-C2127 BCP 68-16 BCP 68-16 Q62702-C2128 BCP 68-25 BCP 68-2

SOT223 NPN SILICON PLANAR BCP68 MEDIUM POWER TRANSISTOR ISSUE 3 FEBRUARY 1996 T i I i C i II V T T E C T I D T I 8 B 8 ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I T IT DITI II V V I V I II i V V I V

UNISONIC TECHNOLOGIES CO., LTD BCP68 NPN SILICON TRANSISTOR NPN MEDIUM POWER TRANSISTOR FEATURES * High current (max. 1 A) * Low voltage (max. 20 V). 1 * Complementary to UTC BCP69 SOT-223 APPLICATIONS * General purpose switching and amplification under high current conditions. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halo

BCP68 SOT-223 Transistor(NPN) 1. BASE SOT-223 2. COLLECTOR 1 3. EMITTER Features For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type BCP69 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collec

SMD Type Transistors NPN Transistors BCP68 (KCP68) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 High current (max. 1 A) Low voltage (max. 20 V) Complements to BCP69 1 2 3 0.250 2.30 (typ) Gauge Plane 2,4 1.Base 2.Collector 1 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector 3 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collect

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCP68T1/D BCP68T1 NPN Silicon Motorola Preferred Device Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current MEDIUM POWER applications. The device is housed in the SOT-223 package, which is designed for NPN SILICON medium power surface mount applications. HIGH CURRENT

CBCP68 NPN CBCP69 PNP www.centralsemi.com SURFACE MOUNT COMPLEMENTARY DESCRIPTION SMALL SIGNAL SILICON The CENTRAL SEMICONDUCTOR CBCP68 and TRANSISTORS CBCP69 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability. MARKING FULL PART NUMBER S

BCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER NPN SILICON High Current HIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered U

BCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT--223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER NPN SILICON High Current IC =1.0 A HIGH CURRENT TRANSISTOR The SOT--223 Package Can

NPN Silicon Epitaxial Transistor BCP68T1G This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface www.onsemi.com mount applications. Features MEDIUM POWER NPN SILICON High Current HIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered Usin

BCP68 NPN SILICON TRANSISTOR SOT-223 FEATURES 1 * High current (max. 1 A) * Low voltage (max. 20 V). 1. BASE 2. COLLECTOR 3. EMITTER APPLICATIONS * General purpose switching and amplification under high current conditions. ABSOLUTE MAXIMUM RATINGS (Ta=25 C , unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage (Open Emitter) VCBO 32 V