DISCRETE SEMICONDUCTORS DATA SHEETndbook, halfpageM3D087BCP68NPN medium power transistor; 20 V, 1 AProduct data sheet 2003 Nov 25Supersedes data of 1999 Apr 08NXP Semiconductors Product data sheetNPN medium power transistor; BCP6820 V, 1 AFEATURES QUICK REFERENCE DATA High currentSYMBOL PARAMETER MIN. MAX. UNIT Two current gain selectionsVCEO collector-

DISCRETE SEMICONDUCTORSDATA SHEETdbook, halfpageM3D087BCP68NPN medium power transistor1999 Apr 08Product specificationSupersedes data of 1997 Apr 09Philips Semiconductors Product specificationNPN medium power transistor BCP68FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 20 V).1 base2, 4 collectorAPPLICATIONS3 emitter Ge

BCP68NPN General Purpose Amplifier4 This device is designed for general purpose medium power amplifiers. Sourced from process 37.321SOT-2231. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 20 VVCBO Collector-Base Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Colle

BCP68; BC868; BC68PA20 V, 2 A NPN medium power transistorsRev. 8 18 October 2011 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNexperia JEITA JEDECBCP68 SOT223 SC-73 - BCP69BC868 SOT89 SC-62 TO-243 BC869BC68PA SO

NPN Silicon AF Transistor BCP 68 For general AF application High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP 69 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3 4BCP 68 BCP 68 Q62702-C2126 B C E C SOT-223BCP 68-10 BCP 68-10 Q62702-C2127BCP 68-16 BCP 68-16 Q62702-C2128BCP 68-25 BCP 68-2

SOT223 NPN SILICON PLANARBCP68MEDIUM POWER TRANSISTORISSUE 3 FEBRUARY 1996 T i I i C i II V T T EC T I D T I 8B 8 ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I V I II i V V I V

UNISONIC TECHNOLOGIES CO., LTD BCP68 NPN SILICON TRANSISTOR NPN MEDIUM POWER TRANSISTOR FEATURES * High current (max. 1 A) * Low voltage (max. 20 V). 1* Complementary to UTC BCP69 SOT-223 APPLICATIONS * General purpose switching and amplification under high current conditions. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halo

BCP68 SOT-223 Transistor(NPN)1. BASE SOT-2232. COLLECTOR 1 3. EMITTER Features For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP69 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters)VCBO Collec

SMD Type TransistorsNPN TransistorsBCP68 (KCP68)Unit:mmSOT-2236.500.23.000.1 Features4 High current (max. 1 A) Low voltage (max. 20 V) Complements to BCP691 2 30.2502.30 (typ)Gauge Plane2,41.Base 2.Collector10.700.13.Emitter4.60 (typ) 4.Collector3 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collect

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCP68T1/DBCP68T1NPN SiliconMotorola Preferred DeviceEpitaxial TransistorThis NPN Silicon Epitaxial Transistor is designed for use in low voltage, high currentMEDIUM POWERapplications. The device is housed in the SOT-223 package, which is designed forNPN SILICONmedium power surface mount applications.HIGH CURRENT

CBCP68 NPNCBCP69 PNPwww.centralsemi.comSURFACE MOUNTCOMPLEMENTARYDESCRIPTION:SMALL SIGNAL SILICONThe CENTRAL SEMICONDUCTOR CBCP68 and TRANSISTORSCBCP69 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability.MARKING: FULL PART NUMBERS

BCP68T1GNPN SiliconEpitaxial TransistorThis NPN Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER NPN SILICON High CurrentHIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered U

BCP68T1GNPN SiliconEpitaxial TransistorThis NPN Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT--223 package, which is designed for medium power surfacehttp://onsemi.commount applications.FeaturesMEDIUM POWER NPN SILICON High Current: IC =1.0 AHIGH CURRENT TRANSISTOR The SOT--223 Package Can

NPN SiliconEpitaxial TransistorBCP68T1GThis NPN Silicon Epitaxial Transistor is designed for use in lowvoltage, high current applications. The device is housed in theSOT-223 package, which is designed for medium power surfacewww.onsemi.commount applications.FeaturesMEDIUM POWER NPN SILICON High CurrentHIGH CURRENT TRANSISTOR The SOT-223 Package Can Be Soldered Usin

BCP68NPN SILICON TRANSISTORSOT-223 FEATURES 1 * High current (max. 1 A) * Low voltage (max. 20 V). 1. BASE 2. COLLECTOR 3. EMITTER APPLICATIONS * General purpose switching and amplification under high current conditions. ABSOLUTE MAXIMUM RATINGS (Ta=25C , unless otherwise specified)PARAMETER SYMBOL RATINGS UNITCollector-Base Voltage (Open Emitter) VCBO 32 V