BCP69 - описание и поиск аналогов

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP69 PNP medium power transistor 1999 Apr 08 Product specification Supersedes data of 1997 Mar 12 Philips Semiconductors Product specification PNP medium power transistor BCP69 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 20 V). 1 base 2, 4 collector APPLICATIONS 3 emitter Gen

BCP69 20 V, 1 A PNP medium power transistor Rev. 06 2 December 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor in a Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number[1] Package Package configuration NXP JEITA BCP69 SOT223 SC-73 medium power BCP69-16 BCP69-16/DG BCP69-16/IN BCP69-25 [1] /DG halog

January 2007 BCP69 PNP General Purpose Amplifier 4 This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0A. 3 Sourced from Process 77. 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -20 V VCBO Co

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BCP69; BC869; BC69PA 20 V, 2 A PNP medium power transistors Rev. 7 12 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package NPN complement Nexperia JEITA JEDEC BCP69 SOT223 SC-73 - BCP68 BC869 SOT89 SC-62 TO-243 BC868 BC69PA SO

PNP Silicon AF Transistor BCP 69 For general AF application High collector current High current gain Low collector-emitter saturation voltage Complementary type BCP 68 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 4 BCP 69 BCP 69 Q62702-C2130 B C E C SOT-223 BCP 69-10 BCP 69-10 Q62702-C2131 BCP 69-16 BCP 69-16 Q62702-C2132 BCP 69-25 BCP 69-2

SOT223 PNP SILICON PLANAR BCP69 MEDIUM POWER TRANSISTOR ISSUE 3 FEBRUARY 1996 T i C i II V T T 8 E C T I D T I B ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I T IT DITI II V V I V I II i V V I V I i

UNISONIC TECHNOLOGIES CO., LTD BCP69 PNP SILICON TRANSISTOR PNP MEDIUM POWER TRANSISTOR FEATURES * High current (max. 1 A) * Low voltage (max. 20 V). * Complementary to UTC BCP68 APPLICATIONS * General purpose switching and amplification * Power applications such as audio output stages. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Fr

BCP69 PNP Transistor Elektronische Bauelemente Silicon Epitaxial Transistor RoHS Compliant Product SOT-223 Description The BCP69 is designed for guse in low voltage and medium power applications. Features * VCEO -20V * IC 1A Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6.30 6.70 BCP69 E 0 10

BCP69 PNP Silicon Epitaxial Transistor COLLECTOR 2, 4 4 P b Lead(Pb)-Free 1.BASE 2.COLLECTOR BASE 1 3.EMITTER 1 2 4.COLLECTOR 3 3 SOT-223 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Value Unit VCBO Collector to Base Voltage -25 V VCEO Collector to Emitter Voltage -20 V VEBO Collector to Base Voltage -5.0 V IC Collector Current A -1.0 Total Device Disspa

SMD Type Transistors PNP Transistors BCP69 (KCP69) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 High current (max. 1 A) Low voltage (max. 20 V) Complements to BCP68 1 2 3 2 0.250 2.30 (typ) Gauge Plane 1.Base 1 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 3 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCP69T1/D BCP69T1 PNP Silicon Motorola Preferred Device Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current MEDIUM POWER applications. The device is housed in the SOT-223 package, which is designed for PNP SILICON medium power surface mount applications. HIGH CURRENT

CBCP68 NPN CBCP69 PNP www.centralsemi.com SURFACE MOUNT COMPLEMENTARY DESCRIPTION SMALL SIGNAL SILICON The CENTRAL SEMICONDUCTOR CBCP68 and TRANSISTORS CBCP69 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability. MARKING FULL PART NUMBER S

BCP69-25 PNP Silicon AF Transistor For general AF applications 4 3 High collector current 2 1 High current gain Low collector-emitter saturation voltage Complementary type BCP68 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCP69-25 ...-25* 1=B 2=C 3=E 4=C - - SOT223 * Marking is the same as

BCP69-16,BCP69-25 Features High Current and Low Voltage Halogen Free. Green Device (Note 1) PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Plastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Transistors Maximum Ratings @ 25 C Unless Otherwise Specified Oper

BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER High Current IC = -1.0 A PNP SILICON The SOT-223 Package Can Be Soldered

BCP69T1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223-4 package, which is designed for medium power surface http //onsemi.com mount applications. High Current IC = -1.0 A MEDIUM POWER The SOT-223-4 Package can be soldered using wave or

BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER High Current IC = -1.0 A PNP SILICON The SOT-223 Package Can Be Soldered

BCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER High Current IC = -1.0 A PNP SILICON The SOT-223 Package Can Be Soldered Using Wave o

Spec. No. C314L3 Issued Date 2005.09.29 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/6 Medium Power PNP Epitaxial Planar Transistor BCP69L3 Features For AF driver and output stage Low saturation voltage High collector current. Complementary to BCP68L3 Pb-free package Symbol Outline BCP69L3 SOT-223 C E B Base C C C