Справочник транзисторов. BCR119S

 

Биполярный транзистор BCR119S - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BCR119S
   Маркировка: WKs
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 4.7 kOhm
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 150 MHz
   Ёмкость коллекторного перехода (Cc): 3 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: SOT363

 Аналоги (замена) для BCR119S

 

 

BCR119S Datasheet (PDF)

 ..1. Size:42K  siemens
bcr119s.pdf

BCR119S
BCR119S

BCR 119SNPN Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated Transistors in one package Built bias resistor (R1=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 119S WKs Q62702-C2415 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363Maximum RatingsParameter Symbol Values UnitCollecto

 0.1. Size:253K  infineon
bcr119series.pdf

BCR119S
BCR119S

BCR119...NPN silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=4.7 k) BCR119S: Two internally isolated transistors with good matching in one multichip package BCR119S: For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified according AEC Q101BCR

 8.1. Size:34K  siemens
bcr119.pdf

BCR119S
BCR119S

BCR 119NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 119 WKs Q62702-C2255 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltage VEB

 8.2. Size:34K  siemens
bcr119w.pdf

BCR119S
BCR119S

BCR 119WNPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 119W WKs Q62702-C2285 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltage

 8.3. Size:250K  infineon
bcr119w.pdf

BCR119S
BCR119S

BCR119...NPN silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=4.7 k) BCR119S: Two internally isolated transistors with good matching in one multichip package BCR119S: For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified according AEC Q101BCR

 8.4. Size:250K  infineon
bcr119f.pdf

BCR119S
BCR119S

BCR119...NPN silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=4.7 k) BCR119S: Two internally isolated transistors with good matching in one multichip package BCR119S: For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified according AEC Q101BCR

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BLX70

 

 
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