BCR141W. Аналоги и основные параметры
Наименование производителя: BCR141W
Маркировка: WDs
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 22 kOhm
Встроенный резистор цепи смещения R2 = 22 kOhm
Соотношение сопротивлений R1/R2 = 1
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 130 MHz
Ёмкость коллекторного перехода (Cc): 3 pf
Статический коэффициент передачи тока (hFE): 50
Корпус транзистора: SOT323
Аналоги (замена) для BCR141W
- подборⓘ биполярного транзистора по параметрам
BCR141W даташит
..1. Size:34K siemens
bcr141w.pdf 
BCR 141W NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22k , R2=22k ) Type Marking Ordering Code Pin Configuration Package BCR 141W WDs Q62702-C2288 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-bas
8.1. Size:35K siemens
bcr141.pdf 
BCR 141 NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22k , R2=22k ) Type Marking Ordering Code Pin Configuration Package BCR 141 WDs Q62702-C2258 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base v
8.2. Size:43K siemens
bcr141s.pdf 
BCR 141S NPN Silicon Digital Transistor Array Switching circuit, inverter, interface, driver circuit Two (galvanic) internal isolated Transistors in one package Built in bias resistor (R1=22k , R2=22k ) Type Marking Ordering Code Pin Configuration Package BCR 141S WDs Q62702-C2416 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Symbol Values Unit Col
9.1. Size:34K siemens
bcr142w.pdf 
BCR 142W NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22k , R2=47k ) Type Marking Ordering Code Pin Configuration Package BCR 142W WZs Q62702-C2289 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-bas
9.2. Size:35K siemens
bcr146.pdf 
BCR 146 NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=47k , R2=22k ) Type Marking Ordering Code Pin Configuration Package BCR 146 WLs Q62702-C2260 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base v
9.3. Size:34K siemens
bcr148w.pdf 
BCR 148W NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=47k , R2=47k ) Type Marking Ordering Code Pin Configuration Package BCR 148W WEs Q62702-C2291 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-bas
9.4. Size:34K siemens
bcr146w.pdf 
BCR 146W NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=47k , R2=22k ) Type Marking Ordering Code Pin Configuration Package BCR 146W WLs UPON INQUIRY 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-bas
9.5. Size:43K siemens
bcr148s.pdf 
BCR 148S NPN Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvaniv) internal isolated Transistors driver circuit Built in bias resistor (R1=47k , R2=47K ) Type Marking Ordering Code Pin Configuration Package BCR 148S WEs Q62702-C2417 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Symbol Values U
9.6. Size:35K siemens
bcr148.pdf 
BCR 148 NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=47k , R2=47k ) Type Marking Ordering Code Pin Configuration Package BCR 148 WEs Q62702-C2261 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base v
9.7. Size:35K siemens
bcr142.pdf 
BCR 142 NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, drver circuit Built in bias resistor (R1=22k , R2=47k ) Type Marking Ordering Code Pin Configuration Package BCR 142 WZs Q62702-C2259 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base vo
9.8. Size:810K infineon
bcr146.pdf 
BCR146 NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=47k , R2=22k ) Pb-free (RoHS compliant) package Qualified according AEC Q101 BCR146 C 3 R1 R2 1 2 B E EHA07184 Type Marking Pin Configuration Package BCR146 WLs 1=B 2=E 3=C - - - SOT23 Maximum Ratings Parameter Symbol Value Unit
9.9. Size:877K infineon
bcr148f.pdf 
BCR148... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit driver circuit Built in bias resistor (R1=47 k , R2=47 k ) BCR148S Two internally isolated transistors with good matching in one multichip package BCR148S For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified accordin
9.10. Size:867K infineon
bcr148 bcr148s bcr148w.pdf 
BCR148... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit driver circuit Built in bias resistor (R1=47 k , R2=47 k ) BCR148S Two internally isolated transistors with good matching in one multichip package BCR148S For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according
Другие транзисторы: BCR133, BCR133S, BCR133W, BCR135, BCR135S, BCR135W, BCR141, BCR141S, BC548, BCR142, BCR142W, BCR146, BCR146W, BCR148, BCR148S, BCR148W, BCR158
