Биполярный транзистор BCR141W - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BCR141W
Маркировка: WDs
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 22 kOhm
Встроенный резистор цепи смещения R2 = 22 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 130 MHz
Ёмкость коллекторного перехода (Cc): 3 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: SOT323
BCR141W Datasheet (PDF)
bcr141w.pdf
BCR 141WNPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22k, R2=22k)Type Marking Ordering Code Pin Configuration PackageBCR 141W WDs Q62702-C2288 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-bas
bcr141.pdf
BCR 141NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22k, R2=22k)Type Marking Ordering Code Pin Configuration PackageBCR 141 WDs Q62702-C2258 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base v
bcr141s.pdf
BCR 141SNPN Silicon Digital Transistor Array Switching circuit, inverter, interface, driver circuit Two (galvanic) internal isolated Transistors in one package Built in bias resistor (R1=22k, R2=22k)Type Marking Ordering Code Pin Configuration PackageBCR 141S WDs Q62702-C2416 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363Maximum RatingsParameter Symbol Values UnitCol
bcr142w.pdf
BCR 142WNPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 142W WZs Q62702-C2289 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-bas
bcr146.pdf
BCR 146NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=47k, R2=22k)Type Marking Ordering Code Pin Configuration PackageBCR 146 WLs Q62702-C2260 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base v
bcr148w.pdf
BCR 148WNPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=47k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 148W WEs Q62702-C2291 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-bas
bcr146w.pdf
BCR 146WNPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=47k, R2=22k)Type Marking Ordering Code Pin Configuration PackageBCR 146W WLs UPON INQUIRY 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-bas
bcr148s.pdf
BCR 148SNPN Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvaniv) internal isolated Transistors driver circuit Built in bias resistor (R1=47k, R2=47K)Type Marking Ordering Code Pin Configuration PackageBCR 148S WEs Q62702-C2417 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363Maximum RatingsParameter Symbol Values U
bcr148.pdf
BCR 148NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=47k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 148 WEs Q62702-C2261 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base v
bcr142.pdf
BCR 142NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, drver circuit Built in bias resistor (R1=22k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 142 WZs Q62702-C2259 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base vo
bcr146.pdf
BCR146NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=47k, R2=22k) Pb-free (RoHS compliant) package Qualified according AEC Q101BCR146C3R1R21 2B EEHA07184Type Marking Pin Configuration PackageBCR146 WLs 1=B 2=E 3=C - - - SOT23Maximum RatingsParameter Symbol Value Unit
bcr148f.pdf
BCR148...NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit driver circuit Built in bias resistor (R1=47 k, R2=47 k) BCR148S: Two internally isolated transistors with good matching in one multichip package BCR148S: For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified accordin
bcr148 bcr148s bcr148w.pdf
BCR148...NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit driver circuit Built in bias resistor (R1=47 k, R2=47 k) BCR148S: Two internally isolated transistors with good matching in one multichip package BCR148S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
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