Биполярный транзистор BCR146 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BCR146
Маркировка: WLs
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 47 kOhm
Встроенный резистор цепи смещения R2 = 22 kOhm
Соотношение сопротивлений R1/R2 = 2.1
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.07 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 3 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: SOT23
BCR146 Datasheet (PDF)
bcr146.pdf
BCR 146NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=47k, R2=22k)Type Marking Ordering Code Pin Configuration PackageBCR 146 WLs Q62702-C2260 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base v
bcr146.pdf
BCR146NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=47k, R2=22k) Pb-free (RoHS compliant) package Qualified according AEC Q101BCR146C3R1R21 2B EEHA07184Type Marking Pin Configuration PackageBCR146 WLs 1=B 2=E 3=C - - - SOT23Maximum RatingsParameter Symbol Value Unit
bcr146w.pdf
BCR 146WNPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=47k, R2=22k)Type Marking Ordering Code Pin Configuration PackageBCR 146W WLs UPON INQUIRY 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-bas
bcr142w.pdf
BCR 142WNPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 142W WZs Q62702-C2289 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-bas
bcr141.pdf
BCR 141NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22k, R2=22k)Type Marking Ordering Code Pin Configuration PackageBCR 141 WDs Q62702-C2258 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base v
bcr148w.pdf
BCR 148WNPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=47k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 148W WEs Q62702-C2291 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-bas
bcr141s.pdf
BCR 141SNPN Silicon Digital Transistor Array Switching circuit, inverter, interface, driver circuit Two (galvanic) internal isolated Transistors in one package Built in bias resistor (R1=22k, R2=22k)Type Marking Ordering Code Pin Configuration PackageBCR 141S WDs Q62702-C2416 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363Maximum RatingsParameter Symbol Values UnitCol
bcr148s.pdf
BCR 148SNPN Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvaniv) internal isolated Transistors driver circuit Built in bias resistor (R1=47k, R2=47K)Type Marking Ordering Code Pin Configuration PackageBCR 148S WEs Q62702-C2417 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363Maximum RatingsParameter Symbol Values U
bcr148.pdf
BCR 148NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=47k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 148 WEs Q62702-C2261 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base v
bcr141w.pdf
BCR 141WNPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22k, R2=22k)Type Marking Ordering Code Pin Configuration PackageBCR 141W WDs Q62702-C2288 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-bas
bcr142.pdf
BCR 142NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, drver circuit Built in bias resistor (R1=22k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 142 WZs Q62702-C2259 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base vo
bcr148f.pdf
BCR148...NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit driver circuit Built in bias resistor (R1=47 k, R2=47 k) BCR148S: Two internally isolated transistors with good matching in one multichip package BCR148S: For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified accordin
bcr148 bcr148s bcr148w.pdf
BCR148...NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit driver circuit Built in bias resistor (R1=47 k, R2=47 k) BCR148S: Two internally isolated transistors with good matching in one multichip package BCR148S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050