DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BCV26; BCV46PNP Darlington transistors1999 Apr 08Product specificationSupersedes data of 1997 Apr 23Philips Semiconductors Product specificationPNP Darlington transistors BCV26; BCV46FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 60 V)1 base Very high DC current gain (min

PNP Silicon Darlington Transistors BCV 26BCV 46 For general AF applications High collector current High current gain Complementary types: BCV 27, BCV 47 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCV 26 FDs Q62702-C1493 B E C SOT-23BCV 46 FEs Q62702-C1475Maximum RatingsParameter Symbol Values UnitBCV 26 BCV 46Collector-emitter volta

SOT23 PNP SILICON PLANARBCV26DARLINGTON TRANSISTORSBCV46ISSUE 3 SEPTEMBER 1995 T i I EC T T V V V V T I D T I V D B V ABSOLUTE MAXIMUM RATINGS. T V V IT II V I V 8 V II i V I V V i V I V V I I 8 i II I I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T V V DITI IT I I II V 8 I V

BCV26, BCV46PNP Silicon Darlington Transistors For general AF applications23 High collector current1 High current gain Complementary types: BCV27, BCV47 (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101Type Marking Pin Configuration PackageBCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23Maximum RatingsParameter Symbol Va