Биполярный транзистор BCV61B - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BCV61B
Маркировка: 1K_1Kp_1Ks_D93
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 2.5 pf
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора: SOT143
BCV61B Datasheet (PDF)
bcv61b bcv61c.pdf
BCV61NPN Silicon Double Transistor To be used as a current mirror3 Good thermal coupling and VBE matching24 High current gain1 Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101C1 (2) C2 (1)Tr.1 Tr.2E1 (3) E2 (4)EHA00012Type Marking Pin Configuration PackageBCV61B 1Ks 1 = C2 2 = C1 3 = E1 4 =
bcv61.pdf
BCV61NPN general-purpose double transistorsRev. 04 18 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP complementNXP JEITABCV61 SOT143B - BCV62BCV61A BCV62ABCV61B BCV62BBCV61C BCV62C1.2 Fea
bcv61 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D071BCV61NPN general purpose doubletransistor1999 Apr 08Product specificationSupersedes data of 1997 Jun 16Philips Semiconductors Product specificationNPN general purpose double transistor BCV61FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 30 V)1 collector TR2; base TR1 and TR2 Matched pai
bcv61.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bcv61.pdf
NPN Silicon Double Transistors BCV 61Preliminary Data To be used as a current mirror Good thermal coupling and VBE matching High current gain Low emitter-saturation voltageType Marking Ordering Code Pin Configuration Package1)(tape and reel)BCV 61 A 1Js Q62702-C2155 SOT-143BCV 61 B 1Ks Q62702-C2156BCV 61 C 1Ls Q62702-C2157Maximum RatingsParameter Symbol Values UnitColl
bcv61.pdf
BCV61NPN Silicon Double Transistor To be used as a current mirror3 Good thermal coupling and VBE matching24 High current gain1 Low collector-emitter saturation voltage Pb-free (RoHS compliant) package1) Qualified according AEC Q101C1 (2) C2 (1)Tr.1 Tr.2E1 (3) E2 (4)EHA00012Type Marking Pin Configuration PackageBCV61 1Js 1 = C2 2 = C1 3 = E1 4
bcv61c.pdf
BCV61CFeatures Low Current Low VoltageNPN Matched Pairs Halogen Free Available Upon Request By Adding Suffix "-HF"General-purpose Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingDouble Transistor Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings @ 25C Unless Othe
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050