Справочник транзисторов. BCW31R

 

Биполярный транзистор BCW31R - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BCW31R
   Маркировка: D4
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.35 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 300 MHz
   Ёмкость коллекторного перехода (Cc): 4 pf
   Статический коэффициент передачи тока (hfe): 110
   Корпус транзистора: TO236

 Аналоги (замена) для BCW31R

 

 

BCW31R Datasheet (PDF)

 9.1. Size:112K  philips
bcw31 bcw32 bcw33 2.pdf

BCW31R
BCW31R

DISCRETE SEMICONDUCTORS DATA SHEETBCW31; BCW32; BCW33NPN general purpose transistorsProduct data sheet 2004 Feb 06Supersedes data of 2000 Jul 04NXP Semiconductors Product data sheetBCW31; BCW32; NPN general purpose transistorsBCW33FEATURES PINNING Low current (100 mA)PIN DESCRIPTION Low voltage (32 V).1 base2 emitterAPPLICATIONS3 collector General

 9.2. Size:49K  philips
bcw31 bcw32 bcw33.pdf

BCW31R
BCW31R

DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D088BCW31; BCW32; BCW33NPN general purpose transistorsProduct specification 2000 Jul 04Supersedes data of 1999 Apr 13Philips Semiconductors Product specificationNPN general purpose transistors BCW31; BCW32; BCW33FEATURES PINNING Low current (100 mA)PIN DESCRIPTION Low voltage (32 V).1 base2 emitterAPPLICATIONS

 9.3. Size:85K  fairchild semi
bcw31.pdf

BCW31R
BCW31R

BCW31NPN General Purpose Amplifier This device is designed for general purpose applications at collector 3currents to 300mA. Sourced from process 10.2SOT-231Mark: D11. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 32 VVCBO Collector-Base Voltage 32 VVEBO Emitte

 9.4. Size:313K  nxp
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BCW31R
BCW31R

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.5. Size:27K  diodes
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BCW31R

SOT23 NPN SILICON PLANAR BCW31BCW32SMALL SIGNAL TRANSISTORSBCW33ISSUE 2 - JUNE 1995 T I D T I D D D D E D D C T T BABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI i V I V V I V V II i V T V I I i V I V I

 9.6. Size:77K  cdil
bcw31 bcw32 bcw33.pdf

BCW31R
BCW31R

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BCW31 BCW32BCW33SILICON PLANAR EPITAXIAL TRANSISTORSNPN transistorsMarkingPACKAGE OUTLINE DETAILSBCW31 = DlALL DIMENSIONS IN mmBCW32 = D2BCW33 = D3Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSBCW31 BCW32 B

 9.7. Size:193K  kec
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BCW31R

SEMICONDUCTORBCW31/32TECHNICAL DATAEPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERSComplementary to BCW29/30._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25)J 0.13+0.10/-0.05K 0.00 ~ 0.10CHARACTERISTIC SYMBOL RATING

 9.8. Size:895K  kexin
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BCW31R
BCW31R

SMD Type TransistorsNPN TransistorsBCW31~BCW33 (KCW31~KCW33)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Low current (100 mA) Low voltage (32 V).1 2 PNP complements: BCW29 and BCW30.+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Ba

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