Справочник транзисторов. BCW61RC

 

Биполярный транзистор BCW61RC - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BCW61RC
   Маркировка: BR_YC
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 32 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 32 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Ёмкость коллекторного перехода (Cc): 4.5 pf
   Статический коэффициент передачи тока (hfe): 125
   Корпус транзистора: SOT23

 Аналоги (замена) для BCW61RC

 

 

BCW61RC Datasheet (PDF)

 9.1. Size:394K  motorola
bcw61blt.pdf

BCW61RC
BCW61RC

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW61BLT1/DBCW61BLT1General Purpose TransistorsBCW61CLT1PNP SiliconCOLLECTORBCW61DLT131BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO 32 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 32 VdcEmitterBase Voltage VEB

 9.2. Size:48K  philips
bcw61 3.pdf

BCW61RC
BCW61RC

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BCW61 seriesPNP general purpose transistorsProduct specification 1999 Apr 12Supersedes data of 1997 May 28Philips Semiconductors Product specificationPNP general purpose transistors BCW61 seriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 32 V).1 base2 emitterAPPLICATIONS

 9.3. Size:120K  philips
bcw61.pdf

BCW61RC
BCW61RC

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088BCW61 seriesPNP general purpose transistorsProduct data sheet 1999 Apr 12Supersedes data of 1997 May 28 NXP Semiconductors Product data sheetPNP general purpose transistors BCW61 seriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 32 V).1 base2 emitterAPPLICATIONS3 coll

 9.4. Size:46K  fairchild semi
bcw61a b c d.pdf

BCW61RC
BCW61RC

BCW61A/B/C/DGeneral Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -32 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -100 mA PC Collector Power Dissipation 350 mW

 9.5. Size:331K  nxp
bcw61b bcw61c bcw61d.pdf

BCW61RC
BCW61RC

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.6. Size:21K  samsung
bcw61a b c d.pdf

BCW61RC
BCW61RC

BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating Unit Cllector-Base Voltage VCBO -32 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -100 mA Collector Dissipation PC 350 mW Storage Temperature TSTG -55 ~ 150 Refer to KS5086 for grap

 9.7. Size:271K  siemens
bcw61 bcx71.pdf

BCW61RC
BCW61RC

PNP Silicon AF Transistors BCW 61BCX 71 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 60, BCX 70 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCW 61 A BAs Q62702-C452 B E C SOT-23BCW 61 B BBs Q62702-C1585BCW 61 C BCs Q62702

 9.8. Size:168K  infineon
bcw61 bcx71.pdf

BCW61RC
BCW61RC

BCW61..., BCX71...PNP Silicon AF Transistors For AF input stages and driver applications23 High current gain1 Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101Type Marking Pin Configuration PackageBCW61A BAs 1=B 2=E 3=C

 9.9. Size:555K  infineon
bcw61a bcw61b bcw61c bcw61d bcx71g bcx71h bcx71j bcx71k.pdf

BCW61RC
BCW61RC

BCW61..., BCX71...PNP Silicon AF Transistors For AF input stages and driver applications23 High current gain1 Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBCW61A BAs 1=B 2=E 3=C SO

 9.10. Size:1639K  secos
bcw61c.pdf

BCW61RC
BCW61RC

BCW61C -0.1A , -32V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Low current AL Low voltage 33Top View C BMARKING : 11 2BC 2K EDPACKAGE INFORMATION Collector H JF G3 Package MPQ Leader Size Millimeter Millimeter REF. REF. Min. Ma

 9.11. Size:1639K  secos
bcw61b.pdf

BCW61RC
BCW61RC

BCW61B -0.1A , -32V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Low current AL Low voltage 33Top ViewC BMARKING : 11 2BB 2K EDPACKAGE INFORMATION Collector H JF G3 Package MPQ Leader Size Millimeter Millimeter REF. REF. Min. M

 9.12. Size:83K  cdil
bcw61a b c d.pdf

BCW61RC
BCW61RC

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BCW61A BCW61BBCW61C BCW61DSILICON PLANAR EPITAXIAL TRANSISTORSPNP silicon transistorsMarkingBCW61A = BABCW61B = BBBCW61C = BC PACKAGE OUTLINE DETAILSBCW61D = BD ALL DIMENSIONS IN mmPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUT

 9.13. Size:374K  lge
bcw61b sot-23.pdf

BCW61RC
BCW61RC

BCW61B SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low current Low voltage AXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO -32 VCollector-Emitter Voltage VCEO -32 VCollector-Emitter Voltage VEBO -5 VEmitter-Base Voltage IC Collector Current -Continuous -0.

 9.14. Size:382K  lge
bcw61c sot-23.pdf

BCW61RC
BCW61RC

BCW61C SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low current Low voltage AXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO -32 VCollector-Emitter Voltage VCEO -32 VCollector-Emitter Voltage VEBO -5 VEmitter-Base Voltage IC Collector Current -Continuous -0.1

 9.15. Size:486K  kexin
bcw61.pdf

BCW61RC
BCW61RC

SMD Type TransistorsPNP TransistorsBCW61 (KCW61)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 Low current Low voltage General Purpose Transistor1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -32 Collector - Emi

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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