BCW65RA. Аналоги и основные параметры
Наименование производителя: BCW65RA
Маркировка: ET
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.35 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 32 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.8 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: SOT23
Аналоги (замена) для BCW65RA
- подборⓘ биполярного транзистора по параметрам
BCW65RA даташит
9.2. Size:134K siemens
bcw65 bcw66.pdf 
NPN Silicon AF Transistors BCW 65 BCW 66 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types BCW 67, BCW 68 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BCW 65 A EAs Q62702-C1516 B E C SOT-23 BCW 65 B EBs Q62702-C1612 BCW 65 C ECs Q62702-C1479 BCW 66 F EFs Q62702-C1892 BCW 66 G EGs Q627
9.3. Size:52K diodes
bcw65 bcw66.pdf 
SOT23 NPN SILICON PLANAR BCW65 MEDIUM POWER TRANSISTORS BCW66 ISSUE 3 - AUGUST 1995 . T I D T I V V E C V T B V T T SOT23 8 ABSOLUTE MAXIMUM RATINGS. T IT II V I V V II i V I V V i V I V V V i II I 8 V II I V V I V Di i i T V i T T T V V V V V V V V BCW65 BCW66 ELECTRICAL CHARACTERISTICS (at Tamb = 25
9.4. Size:102K onsemi
bcw65clt1g.pdf 
BCW65ALT1G, BCW65CLT1G General Purpose Transistor NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector - Emitter Voltage VCEO 32 Vdc Collector - Base Voltage VCBO 60 Vdc 3 Emitter - Base Voltage VEBO 5.0 Vdc 1 Collector Current - Cont
9.5. Size:110K onsemi
bcw65alt1-clt1.pdf 
BCW65ALT1G, BCW65CLT1G General Purpose Transistor NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector - Emitter Voltage VCEO 32 Vdc Collector - Base Voltage VCBO 60 Vdc 3 Emitter - Base Voltage VEBO 5.0 Vdc 1 Collector Current - Cont
9.6. Size:102K onsemi
bcw65alt1g.pdf 
BCW65ALT1G, BCW65CLT1G General Purpose Transistor NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector - Emitter Voltage VCEO 32 Vdc Collector - Base Voltage VCBO 60 Vdc 3 Emitter - Base Voltage VEBO 5.0 Vdc 1 Collector Current - Cont
9.7. Size:73K onsemi
bcw65alt1g bcw65clt1g.pdf 
BCW65ALT1G, BCW65CLT1G General Purpose Transistor NPN Silicon www.onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector - Emitter Voltage VCEO 32 Vdc Collector - Base Voltage VCBO 60 Vdc 3 Emitter - Base Voltage VEBO 5.0 Vdc 1 Collector Current - Continuo
9.8. Size:81K cdil
bcw65a b c.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N P N transistor Marking PACKAGE OUTLINE DETAILS BCW65A = EA ALL DIMENSIONS IN mm BCW65B = EB BCW65C = EC Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS BCW65A 65B 65C C
9.9. Size:296K willas
bcw65alt1.pdf 
FM120-M WILLAS BC LT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features NPN Silicons design, excellent power dissipation offers Batch proces bet Featruester reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in ord
9.10. Size:69K lrc
lbcw65alt1g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBCW65ALT1G Featrues S-LBCW65ALT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emit
9.11. Size:847K kexin
bcw65.pdf 
SMD Type Transistors NPN Transistors BCW65 (KCW65) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Collector Current Capability IC=800mA Collector Emitter Voltage VCEO=32V General Purpose Transistor 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Coll
Другие транзисторы: BCW64C, BCW65, BCW65A, BCW65ALT1, BCW65B, BCW65BLT1, BCW65C, BCW65CLT1, 2SD313, BCW65RB, BCW65RC, BCW66, BCW66F, BCW66G, BCW66H, BCW66RA, BCW66RB
