BCW68H - описание и поиск аналогов

 ..1. Size:266K  nxp
 bcw68f bcw68g bcw68h.pdf 

BCW68 series 45 V, 800 mA PNP general-purpose transistor Rev. 1 21 April 2017 Product data sheet 1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complements BCW66F/G/H 2 Features and benefits High current AEC-Q101 qualified 3 Applications General-purpose switching and amplification 4

 ..2. Size:193K  diodes
 bcw68h.pdf 

A Product Line of Diodes Incorporated BCW68H 45V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -45V Case SOT23 IC = -800mA high Continuous Collector Current Case Material molded plastic, Green molding compound Low Saturation Voltage VCE(sat)

 ..3. Size:504K  mcc
 bcw68h.pdf 

BCW68H Features Ideally Suited for Automatic Insertion Low Current, Low Voltage Epitaxial Planar Die Construction Halogen Free. Green Device (Note 1) PNP Small Moisture Sensitivity Level 1 Signal Transistor Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maxim

 ..4. Size:179K  semtech
 bcw68f bcw68g bcw68h.pdf 

BCW68 PNP Silicon Epitaxial Planar Transistor for high current application The transistor is subdivided into three groups F, G and H according to its DC current gain. SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 45 V Emitter Base Voltage -VEBO 5 V Collector Current -

 9.1. Size:82K  motorola
 bcw68glt.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCW68GLT1/D General Purpose Transistor BCW68GLT1 PNP Silicon COLLECTOR 3 1 3 BASE 1 2 2 EMITTER MAXIMUM RATINGS CASE 318 08, STYLE 6 Rating Symbol Value Unit SOT 23 (TO 236AB) Collector Emitter Voltage VCEO 45 Vdc Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage VEBO 5.0 Vdc Collector

 9.2. Size:230K  fairchild semi
 bcw68g.pdf 

BCW68G C E SOT-23 B Mark DG PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 60 V 3 VEBO Emitter-Base Voltage 5.0 V IC

 9.3. Size:134K  siemens
 bcw67 bcw68.pdf 

PNP Silicon AF Transistors BCW 67 BCW 68 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types BCW 65, BCW 66 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BCW 67 A DAs Q62702-C1560 B E C SOT-23 BCW 67 B DBs Q62702-C1480 BCW 67 C DCs Q62702-C1681 BCW 68 F DFs Q62702-C1893 BCW 68 G DGs Q627

 9.4. Size:53K  diodes
 bcw67 bcw68.pdf 

SOT23 PNP SILICON PLANAR BCW67 MEDIUM POWER TRANSISTORS BCW68 ISSUE 4 - JUNE 1996 T I D T I D . D E C D 8 D 8 T 8 D 8 T B 8 D 8 T T SOT23 8 ABSOLUTE MAXIMUM RATINGS. T 8 IT II i V I V V II i V I V V i V I V V I I i II I 8 I V V Di i i T V i T T T V V V V V V V V BCW67 BCW68 ELECTRICAL CHARACT

 9.5. Size:527K  infineon
 bcw67 bcw68.pdf 

BCW67, BCW68 PNP Silicon AF Transistors For general AF applications 2 3 High current gain 1 Low collector-emitter saturation voltage Complementary types BCW66... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCW67A DAs 1=B 2=E 3=C SOT23 BCW67B DBs 1=B 2=E 3=C SOT23 BCW67C DCs 1=B 2=E 3=C SOT23

 9.6. Size:447K  mcc
 bcw68g.pdf 

BCW68G Features Ideally Suited for Automatic Insertion Low Current, Low Voltage Epitaxial Planar Die Construction Halogen Free. "Green" Device (Note 1) PNP Small Moisture Sensitivity Level 1 Signal Transistor Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum R

 9.7. Size:65K  onsemi
 bcw68glt1g.pdf 

BCW68GL General Purpose Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Vo

 9.8. Size:108K  onsemi
 bcw68glt1.pdf 

BCW68GLT1G General Purpose Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 Vdc 2 EMITTER Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -800 mAdc 3

 9.9. Size:65K  onsemi
 nsvbcw68glt1g.pdf 

BCW68GL General Purpose Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Vo

 9.10. Size:86K  onsemi
 bcw68gl.pdf 

BCW68GL General Purpose Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Vo

 9.11. Size:216K  secos
 bcw68.pdf 

BCW68 PNP Plastic-Encapsulate Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 A FEATURES L 3 3 Complementary to BCW66. Top View C B COLLECTOR 1 1 2 3 2 K E D 1 H J MARKING F G BASE BCW68F DF Millimeter Millimeter BCW68G DG REF. REF. Min. Max. Min. Max. 2 BCW68H DH A 2.70 3.04 G - 0.18

 9.12. Size:81K  cdil
 bcw67 abc bcw68 f.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P N P transistor Marking PACKAGE OUTLINE DETAILS BCW67A = DA ALL DIMENSIONS IN mm BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1

 9.13. Size:768K  jiangsu
 bcw68.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 BCW68 TRANSISTOR (PNP) FEATURES 1. BASE 2. EMITTER Complementary to BCW66, BCW68 is subdivided into 3. COLLECTOR three groups F, G and H according to its DC current gain. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V

 9.14. Size:66K  kec
 bcw68.pdf 

SEMICONDUCTOR BCW68 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. E L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 MAXIMUM RATING (Ta=25 ) H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 0.10 L 0.55 P P VCBO -60 V Collector-Base Voltage M 0.20 MIN N 1.

 9.15. Size:292K  willas
 bcw68glt1.pdf 

FM120-M WILLAS BCW68GLT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch proces PNP Silicons design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to

 9.16. Size:1269K  kexin
 bcw68.pdf 

SMD Type Transistors PNP Transistors BCW68 (KCW68) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 Complementary to BCW66, BCW68 is subdivided into three groups F, G and H according to its DC current gain. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Coll

 9.17. Size:12206K  sprague
 bcw29 bcw30 bcw61a bcw61b bcw61c bcw61d bcw67a bcw67b bcw68f bcw6bg bcw69 bcw70 bcx17 bcx18 bcx71g.pdf