DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088BCX17; BCX18PNP general purpose transistors1999 May 31Product specificationSupersedes data of 1997 Feb 28Philips Semiconductors Product specificationPNP general purpose transistors BCX17; BCX18FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS

DISCRETE SEMICONDUCTORS DATA SHEETBCX17; BCX18PNP general purpose transistorsProduct data sheet 2004 Jan 16Supersedes data of 1999 May 31 NXP Semiconductors Product data sheetPNP general purpose transistors BCX17; BCX18FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector Saturated swi

BCX17SMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAType MarkingBCX17 T1 SILICON EPITAXIAL PLANAR PNPTRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE ISBCX19APPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOLTAGEINTER

BCX17PNP General Purpose Amplifier3 This device is esigned for general purpose amplifier and switching application at current 0.5A. Sourced from process 78.2SOT-231Mark: T11. Base 2. Emitter 3. Collector Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-Base Voltage 50 VVEBO E

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PNP small signal transistor BCX17 Small load switch transistor with high gain and Low saturation voltage. Features Dimensions (Unit : mm) (1) High gain and low saturation voltage. SST3(2) Ideal for small load switching applications. Complements the BCX19 2.9 0.950.40.45(3)Packaging specifications (2) (1)0.95 0.950.15Package Taping1.9Type Code T116(

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BCX17BCX18SILICON PLANAR EPITAXIAL TRANSISTORSPNP transistorsMarkingBCX17 = T1BCX18 = T2Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSBCX17 BCX18Collectoremitter voltage (VBE = 0) VCES max. 50 30 VColle

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCX17LT1/DCOLLECTOR 3PNPGeneral Purpose1BCX17LT1BASETransistorsBCX18LT12 EMITTERNPNCOLLECTOR 3BCX19LT1BCX20LT11BASEVoltage and current are negative for PNP transistors2 EMITTER3MAXIMUM RATINGS1Value 2BCX17LT1 BCX18LT1CASE 31808, STYLE 6Rating Symbol BCX19LT1 BCX20LT1 UnitSOT

BCX17LT1G, PNPBCX18LT1G, PNPBCX19LT1G, NPNSBCX19LT1G, NPNGeneral Purposewww.onsemi.comTransistorsVoltage and Current are Negative forPNP TransistorsSOT-23Features(TO-236)CASE 318-08 S and NSV Prefix for Automotive and Other Applications RequiringSTYLE 6Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapablePNP NPN These Devices a

BCX17LT1G, PNPBCX18LT1G, PNPBCX19LT1G, NPNSBCX19LT1G, NPNGeneral Purposehttp://onsemi.comTransistorsVoltage and Current are Negative forPNP TransistorsSOT-23Features(TO-236)CASE 318-08 S and NSV Prefix for Automotive and Other Applications RequiringSTYLE 6Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapablePNP NPN These Device

BCX17LT1G, PNPBCX18LT1G, PNPBCX19LT1G, NPNSBCX19LT1G, NPNGeneral Purposehttp://onsemi.comTransistorsVoltage and Current are Negative forPNP TransistorsSOT-23Features(TO-236)CASE 318-08 AEC-Q101 Qualified and PPAP CapableSTYLE 6 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsPNP NPN These Devices are

BCX17CSMGENERAL PURPOSE PNP TRANSISTOR IN A HERMETICALLY SEALEDCERAMIC SURFACE MOUNT PACKAGEMECHANICAL DATADimensions in mm (inches) FOR HIGH RELIABILITY APPLICATIONSVCEO = 45V0.51 0.10(0.02 0.004) 0.31rad.(0.012)IC = 500mA321FEATURES1.91 0.10(0.075 0.004)A SILICON PLANAR EPITAXIAL PNP 0.31rad.(0.012)3.05 0.13(0.12 0.005)1.40