MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCX17LT1/DCOLLECTOR 3PNPGeneral Purpose1BCX17LT1BASETransistorsBCX18LT12 EMITTERNPNCOLLECTOR 3BCX19LT1BCX20LT11BASEVoltage and current are negative for PNP transistors2 EMITTER3MAXIMUM RATINGS1Value 2BCX17LT1 BCX18LT1CASE 31808, STYLE 6Rating Symbol BCX19LT1 BCX20LT1 UnitSOT

DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D088BCX19NPN general purpose transistorProduct specification 2000 Jul 28Supersedes data of 1999 Apr 12Philips Semiconductors Product specificationNPN general purpose transistor BCX19FEATURES PINNING High current (500 mA)PIN DESCRIPTION Low voltage (45 V).1 base2 emitterAPPLICATIONS3 collector General pu

BCX19SMALL SIGNAL NPN TRANSISTORType MarkingBCX19 U1 SILICON EPITAXIAL PLANAR NPNTRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE ISBCX17APPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOLTAGEINTERNAL SCHEMATIC DIAG

BCX19NPN Medium Power Transistor3 This device is designed for general purpose amplifiers. Sourced from process 38.2SOT-231Mark: U11. Base 2. Emitter 3. Collector Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-Base Voltage 50 VVEBO Emitter-Base Voltage 5.0 VIC Collector curr

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BCX19DatasheetNPN small signal transistorlOutlinel SOT-23 Parameter Value VCES50VIC500mASST3 lFeatures lInner circuitl l1)High gain and low saturation voltage.2)Complements the BCX17.lApplicationlAUDIO FREQUENCY SMALL SIGNAL AMPLIFIER

BCX17LT1G, PNPBCX18LT1G, PNPBCX19LT1G, NPNSBCX19LT1G, NPNGeneral Purposewww.onsemi.comTransistorsVoltage and Current are Negative forPNP TransistorsSOT-23Features(TO-236)CASE 318-08 S and NSV Prefix for Automotive and Other Applications RequiringSTYLE 6Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapablePNP NPN These Devices a

BCX18LT1G, PNPBCX19LT1G, NPNGeneral PurposeTransistorsVoltage and Current are Negative forhttp://onsemi.comPNP TransistorsPNP NPNFeaturesCOLLECTOR COLLECTOR3 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1 1BASE BASE2 2EMITTER EMITTERMAXIMUM RATINGSRating Symbol Value Unit3Collector - Emitter Voltage VCEO VdcBCX19LT1 45BCX

BCX17LT1G, PNPBCX18LT1G, PNPBCX19LT1G, NPNSBCX19LT1G, NPNGeneral Purposehttp://onsemi.comTransistorsVoltage and Current are Negative forPNP TransistorsSOT-23Features(TO-236)CASE 318-08 AEC-Q101 Qualified and PPAP CapableSTYLE 6 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsPNP NPN These Devices are

BCX18LT1G, PNPBCX19LT1G, NPNGeneral PurposeTransistorsVoltage and Current are Negative forhttp://onsemi.comPNP TransistorsPNP NPNFeaturesCOLLECTOR COLLECTOR3 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1 1BASE BASE2 2EMITTER EMITTERMAXIMUM RATINGSRating Symbol Value Unit3Collector - Emitter Voltage VCEO VdcBCX19LT1 45BCX

BCX19NPN SiliconElektronische Bauelemente Plastic-Encapsulate TransistorA suffix of "-C" specifies halogen & lead-freeSOT-23 CollectorFEATURES 3311n Power dissipationBase2OPCM : 0.225 W (Tamb=25 C)nCollector Current 2EmitterICM : 0.5 AnCollector-base voltage2. 41. 3V(BR)CBO : 50 VnOperating & storage junction temperatureO OTj, Tstg : -

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BCX19BCX20SILICON PLANAR EPITAXIAL TRANSISTORSNPN transistorsMarkingBCX19 = U1BCX20 = U2Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSBCX19 BCX20Collectoremitter voltage (VBE = 0) VCES max. 50 30 VCollecto

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 BCX19 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER Low voltage 3. COLLECTOR MARKING : U1 MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V

SEMICONDUCTORBCX19TECHNICAL DATAEPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.EL B LFEATUREDIM MILLIMETERSSuper Mini Packaged Transistors for Hybrid Circuits._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25 )J 0.13+0.10/-0.05K 0.00 ~ 0.10CHARACTER

SMD Type TransistorsNPN TransistorsBCX19 (KCX19)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=45V1 2 Low voltage+0.1+0.050.95-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base V