Биполярный транзистор BCX52-6 Даташит. Аналоги
Наименование производителя: BCX52-6
Маркировка: AF
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 25 MHz
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: SOT89
Аналог (замена) для BCX52-6
BCX52-6 Datasheet (PDF)
bcp52 bcp52-10 bcp52-16 bcx52 bcx52-10 bcx52-16 bc52pa bc52-10pa bc52-16pa.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bcx52t bcx52-10t bcx52-16t.pdf

BCX52T series60 V, 1 A PNP power bipolar transistorsRev. 1 22 August 2019 Product data sheet1. Product profile1.1. General descriptionPNP power transistors in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plasticpackage.Table 1. Product overviewType number Package NPN complementNexperia JEDECBCX52T SOT89 SC-62 BCX55TBCX52-10T BCX55-10TBCX52-16T BCX55-16T
bcx51 bcx51-16 bcx52 bcx52-16 bcx53 bcx53-10 bcx53-16.pdf

BCX51...-BCX53...PNP Silicon AF Transistors1 For AF driver and output stages2 High collector current 32 Low collector-emitter saturation voltage Complementary types: BCX54...BCX56 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBCX51 AA 1=B 2=C 3=E SOT89 BCX51-16 AD 1=B 2=C 3=E SOT89 BCX52 AE
bcx52 bcx52-10 bcx52-16.pdf

BCX52,BCX52-10,BCX52-16Electrical Characteristics @ 25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO -60IC=-100A, IE=0Collector-Base Breakdown Voltage VV(BR)CEO -60IC=-1mA, IB=0Collector-Emitter Breakdown Voltage VV(BR)EBO -5IE=-100A, IC=0Emitter-Base Breakdown Voltage VICBO VCB=-30V, IE=0Collector-Base Cutoff Current -0.1 A
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .



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