Биполярный транзистор BCX68 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BCX68
Маркировка: CA_CE_-CE
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 60 MHz
Ёмкость коллекторного перехода (Cc): 25 pf
Статический коэффициент передачи тока (hfe): 85
Корпус транзистора: SOT89
BCX68 Datasheet (PDF)
bcx68.pdf
NPN Silicon AF Transistors BCX 68 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 69 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCX 68 Q62702-C1572 B C E SOT-89BCX 68-10 CB Q62702-C1864BCX 68-16 CC Q62702-C1865BCX 68-25 CD Q62702-C1866Maximum Rat
bcx68.pdf
SOT89 NPN SILICON PLANAR BCX68MEDIUM POWER TRANSISTORISSUE 3 FEBRUARY 2007 FEATURES* High gain and low saturation voltages CCOMPLEMENTARY TYPE BCX69PARTMARKING DETAIL BCX68 CEEBCX68-16 CCCBCX68-25 CDBSOT89ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO 25 VCollector-Emitter Voltage VCEO 20 VEmitter-Base
bcx68.pdf
SMD Type TransistorsNPN TransistorsBCX68 (KCX68)1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=20V High gain and low saturation voltages0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 2
cbcx68 cbcx69.pdf
CBCX68 SERIES NPNCBCX69 SERIES PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARY SILICON The CENTRAL SEMICONDUCTOR CBCX68 and SMALL SIGNAL TRANSISTORSCBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability.MARKI
cbcx68-25.pdf
CBCX68 SERIES NPNCBCX69 SERIES PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARY SILICON The CENTRAL SEMICONDUCTOR CBCX68 and SMALL SIGNAL TRANSISTORSCBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability.MARKI
cbcx68-16.pdf
CBCX68 SERIES NPNCBCX69 SERIES PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARY SILICON The CENTRAL SEMICONDUCTOR CBCX68 and SMALL SIGNAL TRANSISTORSCBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability.MARKI
bcx6825.pdf
BCX6825 20V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > 20V Case: SOT89 IC = 1A High Continuous Current Case Material: Molded Plastic, Green Molding Compound. Low Saturation Voltage VCE(sat)
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
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