BCX70. Аналоги и основные параметры
Наименование производителя: BCX70
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 45 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 125 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hFE): 120
Корпус транзистора: SOT23
Аналоги (замена) для BCX70
- подборⓘ биполярного транзистора по параметрам
BCX70 даташит
..1. Size:125K philips
bcx70.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET BCX70 series NPN general purpose transistors Product data sheet 2004 Jan 16 Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheet NPN general purpose transistors BCX70 series FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector General purpos
..2. Size:48K philips
bcx70 3.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCX70 series NPN general purpose transistors 1999 Apr 15 Product specification Supersedes data of 1997 Mar 14 Philips Semiconductors Product specification NPN general purpose transistors BCX70 series FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3
..3. Size:282K siemens
bcw60 bcx70.pdf 
NPN Silicon AF Transistors BCW 60 BCX 70 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BCW 61, BCX 71 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BCW 60 A AAs Q62702-C1517 B E C SOT-23 BCW 60 B ABs Q62702-C1497 BCW 60 C ACs Q6270
..4. Size:556K infineon
bcw60 bcx70.pdf 
BCW60, BCX70 NPN Silicon AF Transistors For AF input stages and driver applications 2 3 High current gain 1 Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BCW61, BCX71 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCW60B ABs 1=B 2=E 3=C SOT23
..5. Size:113K utc
bcx70.pdf 
UTC BCX70 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR MARKING 2 1 CG 3 SOT-23 1 Emitter 2 Base 3 Collector *Pb-free plating product number BCX70L ABSOLUTE MAXIMUM RATINGS (Ta = 25 unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current
..6. Size:1024K kexin
bcx70.pdf 
SMD Type Transistors NPN Transistors BCX70 (KCX70) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 Low current (max. 100 mA) Low voltage (max. 45 V). PNP complements BCX71 series. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base V
0.1. Size:427K motorola
bcx70glt bcx70jlt bcx70klt.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCX70GLT1/D BCX70GLT1 General Purpose Transistors NPN Silicon BCX70JLT1 COLLECTOR 3 BCX70KLT1 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 45 Vdc Collector Base Voltage VCBO 45 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Emitter Base Voltage VEBO 5.0
0.2. Size:75K fairchild semi
bcx70j.pdf 
BCX70J General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW TSTG Storag
0.3. Size:75K fairchild semi
bcx70h.pdf 
BCX70H 3 General Purpose Transistor 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW TSTG Storag
0.4. Size:75K fairchild semi
bcx70k.pdf 
BCX70K General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW TSTG Storag
0.5. Size:75K fairchild semi
bcx70g.pdf 
BCX70G General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW TSTG Storag
0.6. Size:125K nxp
bcx70g bcx70h bcx70j bcx70k.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET BCX70 series NPN general purpose transistors Product data sheet 2004 Jan 16 Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheet NPN general purpose transistors BCX70 series FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector General purpos
0.7. Size:19K samsung
bcx70j.pdf 
BCX70J NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 200 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 Refer to KS3904 for graphs 1. Base 2. Em
0.8. Size:20K samsung
bcx70h.pdf 
BCX70H NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 200 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 Refer to KS3904 for graphs 1. Base 2. Em
0.9. Size:20K samsung
bcx70k.pdf 
BCX70K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Refer to KS3904 for graphs Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 200 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 1. Base 2. Em
0.10. Size:20K samsung
bcx70g.pdf 
BCX70G NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 200 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 Refer to KS5088 for graphs 1. Base 2. Em
0.11. Size:985K rohm
bcx70j k.pdf 
NPN small signal transistor BCX70J, K Features Dimensions (Unit mm) 1) Ideal for switching and AF amplifier applications. BCX70J,K 2) Complements the BCX71. 2.9 0.95 0.4 0.45 (3) Packaging specifications (2) (1) Package Taping 0.95 0.95 0.15 Type Code T116 1.9 Basic ordering unit (pieces) 3000 (1)Emitter Each lead has same dimensions (2)Base BCX70J, K Abbr
0.12. Size:440K secos
bcx70j.pdf 
BCX70J NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES A L Low Current 3 3 Top View Low Voltage C B 1 1 2 Collector 2 K E D MARKING AJ H J F G Base Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.04 G - 0.18
0.13. Size:467K secos
bcx70k.pdf 
BCX70K NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES A L Low Current 3 3 Top View Low Voltage C B 1 1 2 Collector 2 K E D MARKING AK H J F G Base Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.04 G - 0.18
0.14. Size:82K cdil
bcx70g h j k.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N P N silicon transistors Marking PACKAGE OUTLINE DETAILS BCX70G = AG ALL DIMENSIONS IN mm BCX70H = AH BCX70J = AJ BCX70K = AK Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOL
0.15. Size:571K jiangsu
bcx70j bcx70k.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 BCX70J,BCX70K TRANSISTOR (NPN) FEATURES Low current 1. BASE Low voltage 2. EMITTER 3. COLLECTOR MARKING BCX70J AJ, BCX70K AK MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V
0.16. Size:1100K htsemi
bcx70j.pdf 
BCX7 0J,K TRANSISTOR (NPN) SOT-23 FEATURES Low current Low voltage 1. BASE 2. EMITTER 3. COLLECTOR MARKING BCX70J AJ, BCX70K AK MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 200 mA PC Collector
0.17. Size:400K lge
bcx70j-k.pdf 
BCX70J,K SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low current Low voltage Dimensions in inches and (millimeters) MARKING BCX70J AJ, BCX70K AK MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector
Другие транзисторы: BCX68, BCX68-10, BCX68-16, BCX68-25, BCX69, BCX69-10, BCX69-16, BCX69-25, 2SC5200, BCX70G, BCX70GLT1, BCX70H, BCX70J, BCX70JLT1, BCX70K, BCX70KLT1, BCX70RG
