BCX70GGeneral Purpose Transistor32SOT-2311. Base 2. Emitter 3. Collector NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW TSTG Storag

DISCRETE SEMICONDUCTORS DATA SHEETBCX70 seriesNPN general purpose transistorsProduct data sheet 2004 Jan 16Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheetNPN general purpose transistors BCX70 seriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector General purpos

BCX70G NPN EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 200 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 Refer to KS5088 for graphs1. Base 2. Em

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BCX70G BCX70HBCX70J BCX70KSILICON PLANAR EPITAXIAL TRANSISTORSNPN silicon transistorsMarkingPACKAGE OUTLINE DETAILSBCX70G = AGALL DIMENSIONS IN mmBCX70H = AHBCX70J = AJBCX70K = AKPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOL

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCX70GLT1/DBCX70GLT1General Purpose TransistorsNPN SiliconBCX70JLT1COLLECTOR3BCX70KLT11BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 45 VdcCollectorBase Voltage VCBO 45 VdcCASE 31808, STYLE 6SOT23 (TO236AB)EmitterBase Voltage VEBO 5.0

DISCRETE SEMICONDUCTORS DATA SHEETBCX70 seriesNPN general purpose transistorsProduct data sheet 2004 Jan 16Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheetNPN general purpose transistors BCX70 seriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector General purpos

DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D088BCX70 seriesNPN general purpose transistors1999 Apr 15Product specificationSupersedes data of 1997 Mar 14Philips Semiconductors Product specificationNPN general purpose transistors BCX70 seriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3

BCX70JGeneral Purpose Transistor32SOT-2311. Base 2. Emitter 3. Collector NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW TSTG Storag

BCX70H3General Purpose Transistor2SOT-2311. Base 2. Emitter 3. Collector NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW TSTG Storag

BCX70KGeneral Purpose Transistor32SOT-2311. Base 2. Emitter 3. Collector NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW TSTG Storag

BCX70J NPN EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 200 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 Refer to KS3904 for graphs1. Base 2. Em

BCX70H NPN EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 200 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 Refer to KS3904 for graphs1. Base 2. Em

BCX70K NPN EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Refer to KS3904 for graphs Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 200 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 1. Base 2. Em

NPN Silicon AF Transistors BCW 60BCX 70 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 61, BCX 71 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCW 60 A AAs Q62702-C1517 B E C SOT-23BCW 60 B ABs Q62702-C1497BCW 60 C ACs Q6270

NPN small signal transistor BCX70J, K Features Dimensions (Unit : mm) 1) Ideal for switching and AF amplifier applications. BCX70J,K2) Complements the BCX71. 2.9 0.950.40.45(3)Packaging specifications (2) (1)Package Taping0.95 0.950.15Type Code T1161.9Basic ordering unit (pieces) 3000(1)EmitterEach lead has same dimensions(2)BaseBCX70J, KAbbr

BCW60, BCX70NPN Silicon AF Transistors For AF input stages and driver applications23 High current gain1 Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBCW60B ABs 1=B 2=E 3=C SOT23

UTC BCX70 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR MARKING 21CG3SOT-23 1: Emitter 2: Base 3: Collector *Pb-free plating product number: BCX70LABSOLUTE MAXIMUM RATINGS (Ta = 25 unless otherwise noted) PARAMETER SYMBOL RATINGS UNITCollector-Base Voltage VCBO 45 VCollector-Emitter Voltage VCEO 45 VEmitter-Base Voltage VEBO 5 VCollector Current

BCX70J NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23FEATURES AL Low Current 33Top View Low Voltage C B11 2Collector2K EDMARKING : AJ H JF GBaseMillimeter MillimeterREF. REF.Min. Max. Min. Max.A 2.70 3.04 G - 0.18

BCX70K NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23FEATURES AL Low Current 33Top View Low Voltage C B11 2Collector2K EDMARKING : AK H JF GBaseMillimeter MillimeterREF. REF.Min. Max. Min. Max.A 2.70 3.04 G - 0.18

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 BCX70J,BCX70K TRANSISTOR (NPN)FEATURES Low current1. BASE Low voltage2. EMITTER3. COLLECTORMARKING : BCX70JAJ, BCX70K:AK MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V

BCX7 0J,KTRANSISTOR (NPN) SOT-23 FEATURES Low current Low voltage 1. BASE 2. EMITTER 3. COLLECTOR MARKING : BCX70JAJ, BCX70K:AK MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 200 mA PC Collector

BCX70J,K SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low current Low voltage Dimensions in inches and (millimeters)MARKING : BCX70JAJ, BCX70K:AK MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector

SMD Type TransistorsNPN TransistorsBCX70 (KCX70)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features3 Low current (max. 100 mA) Low voltage (max. 45 V). PNP complements: BCX71 series.1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base V