DISCRETE SEMICONDUCTORSDATA SHEETM3D125BCY58; BCY59NPN switching transistors1997 Jun 17Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors BCY58; BCY59FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 ba

BCY59SMALL SIGNAL NPN TRANSISTORDESCRIPTION The BCY59 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-18 metal case. It isintented for use in audio input stages, driverstages and low-noise input stages.The PNP complementary type Is BCY79.TO-18INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCES Collector-Emitter Voltage (VBE = 0)

BCY59SMALL SIGNAL NPN TRANSISTORDESCRIPTION The BCY59 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-18 metal case. It isintented for use in audio input stages, driverstages and low-noise input stages.The PNP complementary type Is BCY79.TO-18INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCES Collector-Emitter Voltage (VBE = 0)

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY58, BCY59TO-18Low Noise Audio Amplifier Input Stages & Driver ApplicationsComplementary BCY78/79ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BCY58 BCY59 UNITSCollector -Emitter Voltage VCEO 32 45 VCollector -Emitter Voltage(RBE=10 ohm

BCY59DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 45V CEO6.22 0.13 A = 1.27 0.13I = 0.2A C(0.05