BCY59AP - описание и поиск аналогов

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BCY58; BCY59 NPN switching transistors 1997 Jun 17 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors BCY58; BCY59 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 ba

BCY59 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The BCY59 is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case. It is intented for use in audio input stages, driver stages and low-noise input stages. The PNP complementary type Is BCY79. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0)

BCY59 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The BCY59 is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case. It is intented for use in audio input stages, driver stages and low-noise input stages. The PNP complementary type Is BCY79. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0)

BCY59DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 45V CEO 6.22 0.13 A = 1.27 0.13 I = 0.2A C (0.05

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY58, BCY59 TO-18 Low Noise Audio Amplifier Input Stages & Driver Applications Complementary BCY78/79 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BCY58 BCY59 UNITS Collector -Emitter Voltage VCEO 32 45 V Collector -Emitter Voltage(RBE=10 ohm