DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BD131NPN power transistor1999 Apr 12Product specificationSupersedes data of 1997 Mar 04Philips Semiconductors Product specificationNPN power transistor BD131FEATURES PINNING High current (max. 3 A)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 collector, connected to metal part ofAPPLICATIONS mount

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON EPITAXIAL POWER TRANSISTORSNPNBD131PNPBD132TO-126 Plastic PackageECBGeneral Purpose Medium Power ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD131 BD132 UNITCollector -Base Voltage VCBO V70 45Collector -Emitter Voltage VCEO V45 45Emitter-Base Voltage

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD131DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage -: V = 45V(Min.)(BR)CEOComplement to type BD132Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power and general purposeapplications.ABSOLUTE

PNP BD132 NPN BD131 SILICON PLANAR EPITAXIAL POWER TRANSISTORSThe BD132are PNN transistors mounted in Jedec TO-126 plastic package. Medium power applications. NPN complements are BD131 . ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit-VCEO Collector-Emitter Voltage 45 V-VCBO Collector-Base Voltage 45 V-VEBO Emitter-Base Voltage 4 VSymbol Ratings Value Unit-IC 3 IC