BD136 - Даташиты. Аналоги. Основные параметры

Order this document MOTOROLA by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 Plastic Medium Power Silicon BD140 PNP Transistor BD140-10 . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc 1.5 AMPERE BD 136, 138, 140 are complementary with BD 135, 137, 139 POW

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 BD136; BD138; BD140 PNP power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 26 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 FEATURES PINNING High current (max. 1.5 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to met

BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are pre-selected in DC current gain Application General purpose 1 2 3 Description SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN typ

BD136 BD138/BD140 PNP SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The BD136, BD138 and BD140 are silicon epitaxial planar PNP transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. 1 2 The complementary NPN types are the BD135 3 BD137 and BD139. SOT-32 I

BD136 BD138/BD140 PNP SILICON TRANSISTORS Type Marking BD136 BD136 BD136-10 BD136-10 BD136-16 BD136-16 BD138 BD138 BD140 BD140 BD140-10 BD140-10 1 BD140-16 BD140-16 2 3 STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTOR SOT-32 DESCRIPTION The BD136, BD138 and BD140 are silicon Epitaxial Planar PNP transistors mounted in Jedec SOT-32 plastic package, designed for

BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are pre-selected in DC current gain Application General purpose 1 2 3 Description SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN typ

BD136/138/140 Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD136 - 45 V BD138 - 60 V BD140 - 80 V VCEO Collector-Emitter Voltage

BD136/138/140 Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD136 - 45 V BD138 - 60 V BD140 - 80 V VCEO Collector-Emitter Voltage

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTORS BD136 BD138 BD140 TO126 Plastic Package E C B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD135, BD137, BD139 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD136 BD138 BD140 UNIT Collector -Emitter Voltage VCEO 45 60 80 V Col

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD136 / BD138 / BD140 TRANSISTOR (PNP) TO 126 FEATURES 1. EMITTER High Current Complement To BD135, BD137 And BD139 2. COLLECTOR 3. BASE Equivalent Circuit Equivalent Circuit BD136 BD138 BD140 XX XX XX BD136,BD138,BD140=Device code Solid dot = Green molding compo

SEMICONDUCTOR BD136 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A B D C FEATURES E High Current. (Max. -1.5A) F Low Voltage (Max. -45V) DC Current Gain hFE=40Min. @IC=-0.15A G Complementary to BD135. H DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D 3.2 0.1 MAXIMUM RATING (Ta=25 ) E 3.5 _ + F 11.0 0.3 CHARACTERISTIC SYMBOL

BD136/BD138/BD140(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features High Current(-1.5A) Low Voltage(-80V) Dimensions in inches and (millimeters) 2.500 MAXIMUM RATINGS (TA=25 unless otherwise noted) 7.400 2.900 1.100 7.800 1.500 Units Value 3.900 3.000 Symbol Parameter 4.100 3.200 BD135 BD137 BD139 10.600 0.000 11.000

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD136 BD138 BD140 DESCRIPTION With TO-126 package High current Complement to type BD135/137/139 APPLICATIONS Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta

isc Silicon PNP Power Transistor BD136 DESCRIPTION DC Current Gain- h = 40(Min)@ I = -0.15A FE C Collector-Emitter Sustaining Voltage - V = -45V(Min) CEO(SUS) Complement to type BD135 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as audio amplifiers and drivers utilizing complementary or quasi compleme

BD136G, BD138G, BD140G Plastic Medium-Power Silicon PNP Transistors This series of plastic, medium-power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. www.onsemi.com Features High DC Current Gain 1.5 A POWER TRANSISTORS BD 136, 138, 140 are complementary with BD 135, 137, 139 PNP SILICON

PNP Epitaxial Silicon Transistor BD136 Series BD136 / BD138 / BD140 Applications www.onsemi.com Complement to BD135, BD137 and BD139 Respectively These are Pb-Free Devices ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) Rating Symbol Max Unit Collector-Base Voltage VCBO V BD136 -45 BD138 -60 TO-126 BD140 -80 CASE 340AS 1 2 3 Collector-Emitter Voltage VCEO V

BD136T / BD138T / BD140T PNP PLASTIC POWER TRANSISTOR Medium power linear and switching applications E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD136T BD138T BD140T -VCBO Collector Base Voltage 45 60 100 V -VCEO Collector Emitter Voltage 45 60 80 V -VEBO Emitter Base Voltage 5 V Collector Current -IC 1.5 A Base Cur

PN P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD136 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25