Справочник транзисторов. BD136G

 

Биполярный транзистор BD136G Даташит. Аналоги


   Наименование производителя: BD136G
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 12 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 45 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 50 MHz
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO126
 

 Аналог (замена) для BD136G

   - подбор ⓘ биполярного транзистора по параметрам

 

BD136G Datasheet (PDF)

 ..1. Size:173K  onsemi
bd136g bd138g bd140g.pdfpdf_icon

BD136G

BD136G, BD138G, BD140GPlastic Medium-PowerSilicon PNP TransistorsThis series of plastic, medium-power silicon PNP transistors aredesigned for use as audio amplifiers and drivers utilizingcomplementary or quasi complementary circuits.www.onsemi.comFeatures High DC Current Gain1.5 A POWER TRANSISTORS BD 136, 138, 140 are complementary with BD 135, 137, 139PNP SILICON

 9.1. Size:104K  motorola
bd136 bd138 bd140-10 bd136 bd138 bd140.pdfpdf_icon

BD136G

Order this documentMOTOROLAby BD136/DSEMICONDUCTOR TECHNICAL DATABD136BD138Plastic Medium Power SiliconBD140PNP TransistorBD140-10. . . designed for use as audio amplifiers and drivers utilizing complementary or quasicomplementary circuits. DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc1.5 AMPERE BD 136, 138, 140 are complementary with BD 135, 137, 139POW

 9.2. Size:49K  philips
bd136 bd138 bd140.pdfpdf_icon

BD136G

DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D100BD136; BD138; BD140PNP power transistors1999 Apr 12Product specificationSupersedes data of 1997 Mar 26Philips Semiconductors Product specificationPNP power transistors BD136; BD138; BD140FEATURES PINNING High current (max. 1.5 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collector, connected to met

 9.3. Size:141K  st
bd135 bd135-16 bd136 bd136-16 bd139 bd139-10 bd139-16 bd140 bd140-10 bd140-16.pdfpdf_icon

BD136G

BD135 - BD136BD139 - BD140Complementary low voltage transistorFeatures Products are pre-selected in DC current gainApplication General purpose123DescriptionSOT-32These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN typ

Другие транзисторы... BD135-10 , BD135-16 , BD135-6 , BD135G , BD136 , BD136-10 , BD136-16 , BD136-6 , TIP41C , BD137 , BD137-10 , BD137-16 , BD137-6 , BD137G , BD138 , BD138-10 , BD138-6 .

History: LMUN5233DW1T1G | 2SD1201 | ECG260 | BD378-6 | 2PB709S | TIP146 | LMUN5235DW1T1G

 

 
Back to Top

 


 
.