BD179-6 - описание и поиск аналогов

BD179 NPN power transistor Features NPN transistor Applications General purpose switching 1 Description 2 3 The device is manufactured in Planar technology SOT-32 with Base Island layout. The resulting transistor (TO-126) shows exceptional high gain performance coupled with very low saturation voltage. Figure 1. Internal schematic diagram Table 1. Device summa

BD175/177/179 Medium Power Linear and Switching Applications Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO *Collector-Base Voltage BD175 45 V BD177 60 V BD179 80 V VCEO Collector-Emitter Voltage BD175 45 V

BD179 Plastic Medium-Power NPN Silicon Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features http //onsemi.com DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc 3.0 AMPERES BD179 is complementary with BD180 Pb-Free Package is Available* POWER TRANSISTORS NPN SILICON 80 V

BD179 Plastic Medium-Power NPN Silicon Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features http //onsemi.com DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc 3.0 AMPERES BD179 is complementary with BD180 Pb-Free Package is Available* POWER TRANSISTORS NPN SILICON 80 V

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BD176 EPITAXIAL SILICON POWER TRANSISTORS BD175 BD178 BD177 BD180 BD179 NPN PNP TO126 Plastic Package E C B Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD175 BD177 BD179 UNIT BD176 BD178 BD180 Collector -Emitter Voltage VCE

NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD179 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25

isc Silicon NPN Power Transistor BD179 DESCRIPTION DC Current Gain- h = 40-250(Min)@ I = 0.15A FE C Collector-Emitter Sustaining Voltage - V = 80V(Min) CEO(SUS) Complement to type BD180 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD175 BD177 BD179 DESCRIPTION With TO-126 package Complement to type BD176/178 /180 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CON