Биполярный транзистор BD180-10 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BD180-10
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 135 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hfe): 63
Корпус транзистора: TO126
BD180-10 Datasheet (PDF)
bd180-d.pdf
BD180Plastic Medium PowerSilicon PNP TransistorThis device is designed for use in 5.0 to 10 Watt audio amplifiersand drivers utilizing complementary or quasi complementary circuits.http://onsemi.comFeatures DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc3.0 AMPERES BD180 is complementary with BD179POWER TRANSISTORS Pb-Free Package is Available*PNP SILICON80 V
bd180rev.pdf
Order this documentMOTOROLAby BD180/DSEMICONDUCTOR TECHNICAL DATABD180Plastic Medium Power Silicon3.0 AMPERESPNP TransistorPOWER TRANSISTORPNP SILICON. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing80 VOLTScomplementary or quasi complementary circuits.30 WATTS DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc
bd176 bd178 bd180.pdf
BD176/178/180Medium Power Linear and Switching Applications Complement to BD 175/177/179 respectivelyTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO *Collector-Base Voltage : BD176 - 45 V : BD178 - 60 V : BD180 - 80 V VCEO Collector-Emitter Voltage : BD176 -
bd180g.pdf
BD180GPlastic Medium-PowerSilicon PNP TransistorThis device is designed for use in 5.0 to 10 Watt audio amplifiersand drivers utilizing complementary or quasi complementary circuits.http://onsemi.comFeatures High DC Current Gain3.0 AMPERES BD180 is complementary with BD179POWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant*PNP SILICON80 VOLTS, 3
bd175 bd176 bd177 bd178 bd179 bd180.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBD176 EPITAXIAL SILICON POWER TRANSISTORS BD175BD178BD177BD180BD179NPN PNPTO126 Plastic PackageECBIntended for use in Medium Power Linear Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD175 BD177 BD179 UNITBD176 BD178 BD180Collector -Emitter Voltage VCE
hsbd180.pdf
PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD180 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25
bd176 bd178 bd180.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD176 BD178 BD180 DESCRIPTION With TO-126 package Complement to type BD175 /177 /179 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER COND
bd180.pdf
isc Silicon PNP Power Transistor BD180DESCRIPTIONDC Current Gain-: h = 40-250(Min)@ I = -0.15AFE CCollector-Emitter Sustaining Voltage -: V = -80V(Min)CEO(SUS)Complement to type BD179Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATINGS
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050