BD180-6 - описание и поиск аналогов

BD180 Plastic Medium Power Silicon PNP Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http //onsemi.com Features DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc 3.0 AMPERES BD180 is complementary with BD179 POWER TRANSISTORS Pb-Free Package is Available* PNP SILICON 80 V

Order this document MOTOROLA by BD180/D SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon 3.0 AMPERES PNP Transistor POWER TRANSISTOR PNP SILICON . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing 80 VOLTS complementary or quasi complementary circuits. 30 WATTS DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc

BD176/178/180 Medium Power Linear and Switching Applications Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO *Collector-Base Voltage BD176 - 45 V BD178 - 60 V BD180 - 80 V VCEO Collector-Emitter Voltage BD176 -

BD180G Plastic Medium-Power Silicon PNP Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http //onsemi.com Features High DC Current Gain 3.0 AMPERES BD180 is complementary with BD179 POWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant* PNP SILICON 80 VOLTS, 3

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BD176 EPITAXIAL SILICON POWER TRANSISTORS BD175 BD178 BD177 BD180 BD179 NPN PNP TO126 Plastic Package E C B Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD175 BD177 BD179 UNIT BD176 BD178 BD180 Collector -Emitter Voltage VCE

PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD180 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD176 BD178 BD180 DESCRIPTION With TO-126 package Complement to type BD175 /177 /179 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER COND

isc Silicon PNP Power Transistor BD180 DESCRIPTION DC Current Gain- h = 40-250(Min)@ I = -0.15A FE C Collector-Emitter Sustaining Voltage - V = -80V(Min) CEO(SUS) Complement to type BD179 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS