Биполярный транзистор BD233G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BD233G
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 45 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO126
BD233G Datasheet (PDF)
bd233 bd235 bd237.pdf
BD233/235/237Medium Power Linear and Switching Applications Complement to BD 234/236/238 respectivelyTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD233 45 V : BD235 60 V : BD237 100 V VCEO Collector-Emitter Voltage : BD233 45 V
bd233 bd234 bd235 bd236 bd237 bd238.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyEPITAXIAL SILICON POWER TRANSISTORS BD233 BD234BD235 BD236BD237 BD238NPN PNPTO126 Plastic PackageECBIntended for use in Medium Power Linear Switching ApplicationsABSOLUTE MAXIMUM RATINGSBD233 BD235 BD237DESCRIPTION SYMBOL UNITBD234 BD236 BD238Collector Base Voltage VCBO 45 60
bd233 bd235 bd237.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate TransistorsBD233 / BD235 / BD237 TRANSISTOR (NPN)TO-126 FEATURESComplement to BD234/BD236/BD238 respectively 1. EMITTER2. COLLECTOR3. BASE Equivalent Circuit BD233 BD235 BD237 XX XX XXBD233,BD235,BD237=Device code Solid dot = Green molding compound device, if none, the normal
bd233 bd235 bd237.pdf
BD233/235/237(NPN)TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features2.5007.4002.9001.1007.800 Complement to BD 234/236/238 respectively 1.5003.9003.0004.100MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.20010.600Symbol Parameter Value Units0.00011.0000.300Collector-Base Voltage BD233 45 VCBO V BD235 60 BD237
bd233 bd235 bd237.pdf
BD233/235/237NPN Epitaxial Planar Transistors1. EMITTER2. COLLECTORP b Lead(Pb)-Free3. BASE123TO-126ABSOLUTE MAXIMUM RATINGS(TA=25C)Rating Symbol BD233 BD235 BD237 UnitVCBO45 60 100 VCollector-Emitter VoltageVCEO45 60 80 VCollector-Base VoltageVEBOEmitter-Base Voltage 5.0 5.0 5.0 VCollector Current IC2.0 APD1.25 WPower DisspationTj150 CJ
hsbd233.pdf
NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD233 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25
bd233 bd235 bd237.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor BD233/235/237DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 0.15AFE CComplement to Type BD234/236/238Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 5~10 watt audio amplifiers and driversutilizing complementary or quasi complementary circuits.ABS
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050