Биполярный транзистор BD239 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BD239
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 55 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO220
BD239 Datasheet (PDF)
bd239 bd239a bd239b bd239c.pdf
BD239/A/B/CMedium Power Linear and Switching Applications Complement to BD240/A/B/C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCEO Collector-Emitter Voltage: BD239 45 V: BD239A 60 V: BD239B 80 V: BD239C 100 V VCER Collector-Emitter Voltage:
bd239 bd239a bd239b bd239c.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
bd239 a b c bd240.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package BD239, BD239A, BD239B, BD239CBD240, BD240A, BD240B, BD240CBD239, 239A, 239B, 239C NPN PLASTIC POWER TRANSISTORSBD240, 240A, 240B, 240C PNP PLASTIC POWER TRANSISTORSGeneral Purpose Amplifier and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER
bd239 a b c.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD239/A/B/C DESCRIPTION With TO-220C package Complement to type BD240/A/B/C APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS
bd239 bd239a bd239b bd239c.pdf
isc Silicon NPN Power Transistor BD239/A/B/CDESCRIPTIONDC Current Gain -h = 40(Min)@ I = 0.2AFE CCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BD239; 60V(Min)- BD239ACEO(SUS)80V(Min)- BD239B; 100V(Min)- BD239CComplement to Type BD240/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium powe
bd239c bd240c.pdf
BD239CBD240CCOMPLEMENTARY SILICON POWER TRANSISTORS BD239C IS ST PREFERRED SALESTYPEDESCRIPTION The BD239C is a silicon epitaxial-base NPNtransistor mounted in Jedec TO-220 plasticpackage.It is inteded for use in medium power linear andswitching applications.3The PNP complementary type is BD240C.21TO-220INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymb
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050