BD239B datasheet, аналоги, основные параметры
Наименование производителя: BD239B
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 90 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hFE): 15
Корпус транзистора: TO220
Аналоги (замена) для BD239B
- подборⓘ биполярного транзистора по параметрам
BD239B даташит
bd239 bd239a bd239b bd239c.pdf
BD239/A/B/C Medium Power Linear and Switching Applications Complement to BD240/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage BD239 45 V BD239A 60 V BD239B 80 V BD239C 100 V VCER Collector-Emitter Voltage
bd239 bd239a bd239b bd239c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
bd239 bd239a bd239b bd239c.pdf
isc Silicon NPN Power Transistor BD239/A/B/C DESCRIPTION DC Current Gain -h = 40(Min)@ I = 0.2A FE C Collector-Emitter Sustaining Voltage- V = 45V(Min)- BD239; 60V(Min)- BD239A CEO(SUS) 80V(Min)- BD239B; 100V(Min)- BD239C Complement to Type BD240/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium powe
bd239c bd240c.pdf
BD239C BD240C COMPLEMENTARY SILICON POWER TRANSISTORS BD239C IS ST PREFERRED SALESTYPE DESCRIPTION The BD239C is a silicon epitaxial-base NPN transistor mounted in Jedec TO-220 plastic package. It is inteded for use in medium power linear and switching applications. 3 The PNP complementary type is BD240C. 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb
Другие транзисторы: BD237G, BD238, BD238-10, BD238-16, BD238-6, BD238G, BD239, BD239A, C1815, BD239C, BD239D, BD239E, BD239F, BD240, BD240A, BD240B, BD240C
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