Биполярный транзистор BD240E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BD240E
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO220
BD240E Datasheet (PDF)
bd239c bd240c.pdf
BD239CBD240CCOMPLEMENTARY SILICON POWER TRANSISTORS BD239C IS ST PREFERRED SALESTYPEDESCRIPTION The BD239C is a silicon epitaxial-base NPNtransistor mounted in Jedec TO-220 plasticpackage.It is inteded for use in medium power linear andswitching applications.3The PNP complementary type is BD240C.21TO-220INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymb
bd240 a b c.pdf
BD240/A/B/CMedium Power Linear and Switching Applications Complement to BD239/A/B/C respectivelyTO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCEO Collector-Base Voltage: BD240 - 45 V: BD240A - 60 V: BD240B - 80 V: BD240C - 100 V VCER Collector-Emitter Volta
bd240c.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON EPITAXIAL POWER TRANSISTOR BD 240C(BPL)TO-220Complementary Silicon transistor Intended For A Wide Variety Of Switching & AmplifierApplications,Series And Shunt Regulators, Driver And Output Stages of HI-FI AmplifiersABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNI
bd239 a b c bd240.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package BD239, BD239A, BD239B, BD239CBD240, BD240A, BD240B, BD240CBD239, 239A, 239B, 239C NPN PLASTIC POWER TRANSISTORSBD240, 240A, 240B, 240C PNP PLASTIC POWER TRANSISTORSGeneral Purpose Amplifier and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER
bd240.pdf
BD240, BD240A, BD240B, BD240CPNP SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD241 SeriesTO-220 PACKAGE(TOP VIEW) 30 W at 25C Case Temperature 2 A Continuous Collector CurrentB 1C 2 4 A Peak Collector CurrentE 3 Customer-Specified Selections AvailablePin 2 is in ele
bd240 bd240a bd240b bd240c.pdf
isc Silicon PNP Power Transistor BD240/A/B/CDESCRIPTIONDC Current Gain -h = 40(Min)@ I = -0.2AFE CCollector-Emitter Sustaining Voltage-: V = -45V(Min)- BD240; -60V(Min)- BD240ACEO(SUS)-80V(Min)- BD240B; -100V(Min)- BD240CComplement to Type BD239/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium
bd240 a b c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD240/A/B/C DESCRIPTION With TO-220C package Complement to type BD239/A/B/C APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
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