BD241A datasheet, аналоги, основные параметры
Наименование производителя: BD241A
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 70 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hFE): 25
Корпус транзистора: TO220
Аналоги (замена) для BD241A
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BD241A даташит
..1. Size:252K st
bd241a bd241c.pdf 
BD241A BD241C NPN power transistors . Features NPN transistors Applications Audio, general purpose switching and amplifier transistors 3 2 1 Description TO-220 The devices are manufactured in Planar technology with Base Island layout. The resulting transistor shows exceptional high gain Figure 1. Internal schematic diagram performance coupled with very low sa
..2. Size:27K fairchild semi
bd241 bd241a bd241b bd241c.pdf 
BD241/A/B/C Medium Power Linear and Switching Applications Complement to BD242/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage BD241 45 V BD241A 60 V BD241B 80 V BD241C 100 V VCER Collector-Emitter Voltage
..3. Size:211K inchange semiconductor
bd241 bd241a bd241b bd241c.pdf 
isc Silicon NPN Power Transistor BD241/A/B/C DESCRIPTION DC Current Gain -h = 25(Min)@ I = 1.0A FE C Collector-Emitter Sustaining Voltage- V = 45V(Min)- BD241; 60V(Min)- BD241A CEO(SUS) 80V(Min)- BD241B; 100V(Min)- BD241C Complement to Type BD242/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gene
0.1. Size:255K st
bd241a-a.pdf 
BD241A-A NPN power transistor . Features This device is qualified for automotive application NPN transistor Applications 3 Audio, general purpose switching and amplifier 2 1 transistors TO-220 Description The devices are manufactured in Planar Figure 1. Internal schematic diagram technology with Base Island layout. The resulting transistor shows exception
9.1. Size:139K motorola
bd241b bd241c bd242b bd242c.pdf 
Order this document MOTOROLA by BD241B/D SEMICONDUCTOR TECHNICAL DATA NPN BD241B Complementary Silicon Plastic BD241C* Power Transistors PNP . . . designed for use in general purpose amplifier and switching applications. BD242B Collector Emitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc BD242C* Collector Emitter Sustaining Voltage VCEO(sus) = 80 V
9.3. Size:32K st
bd241cfp.pdf 
BD241CFP COMPLEMENTARY SILICON POWER TRANSISTOR FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BD241CFP is silicon epitaxial-base NPN 3 transistor mounted in TO-220FP fully molded 2 1 isolated package. It is inteded for power linear and switching TO-220FP applications. INTER
9.4. Size:66K st
bd241 bd242.pdf 
BD241A/B/C BD242A/B/C COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. 3 2 The complementary PNP types are BD242A, 1 BD2
9.5. Size:29K st
bd241bfp bd242bfp.pdf 
BD241BFP BD242BFP COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIERS 3 DESCRIPTION 2 1 The BD241BFP is silicon epitaxial-base NPN transistors mounted in TO-220FP fully molded TO-220FP isol
9.6. Size:140K onsemi
bd241cg.pdf 
BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http //onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS Features COMPLEMENTARY Collector-Emitter Saturation Voltage - SILICON VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc 3 AMP Collector-Emitter Sustaining Voltage - 80-100 VOLTS VCEO(sus)
9.7. Size:238K onsemi
bd241c bd242b bd242c.pdf 
BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors www.onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS Features COMPLEMENTARY High Current Gain - Bandwidth Product SILICON Compact TO-220 AB Package 3 AMP Epoxy Meets UL94 V-0 @ 0.125 in 80-100 VOLTS These Devices are Pb-F
9.8. Size:87K power-innovations
bd241.pdf 
BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD242 Series TO-220 PACKAGE (TOP VIEW) 40 W at 25 C Case Temperature 3 A Continuous Collector Current B 1 C 2 5 A Peak Collector Current E 3 Customer-Specified Selections Available Pin 2 is in ele
9.10. Size:119K inchange semiconductor
bd241 a b c.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD241/A/B/C DESCRIPTION With TO-220C package Complement to type BD242/A/B/C APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS
Другие транзисторы: BD240, BD240A, BD240B, BD240C, BD240D, BD240E, BD240F, BD241, TIP3055, BD241B, BD241C, BD241D, BD241E, BD241F, BD242, BD242A, BD242B
