Биполярный транзистор BD242 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BD242
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 55 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hfe): 25
Корпус транзистора: TO220
BD242 Datasheet (PDF)
bd241 bd242.pdf
BD241A/B/CBD242A/B/CCOMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD241A, BD241B and BD241C are siliconepitaxial-base NPN transistors mounted in JedecTO-220 plastic package.They are inteded for use in medium power linearand switching applications.32The complementary PNP types are BD242A,1BD2
bd242 a b c.pdf
BD242/A/B/CMedium Power Linear and Switching Applications Complement to BD241/A/B/C respectivelyTO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCEO Collector-Emitter Voltage: BD242 - 45 V: BD242A - 60 V: BD242B - 80 V: BD242C - 100 V VCER Collector-Emitter Vo
bd242.pdf
BD242, BD242A, BD242B, BD242CPNP SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD241 SeriesTO-220 PACKAGE(TOP VIEW) 40 W at 25C Case Temperature 3 A Continuous Collector CurrentB 1C 2 5 A Peak Collector CurrentE 3 Customer-Specified Selections AvailablePin 2 is in ele
bd242 bd242a bd242b bd242c.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor BD242/A/B/CDESCRIPTIONDC Current Gain -h = 25(Min)@ I = -1.0AFE CCollector-Emitter Sustaining Voltage-: V = -45V(Min)- BD242; -60V(Min)- BD242ACEO(SUS)-80V(Min)- BD242B; -100V(Min)- BD242CComplement to Type BD241/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION
bd242 a b c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD242/A/B/C DESCRIPTION With TO-220C package Complement to type BD241/A/B/C APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS
bd241b bd241c bd242b bd242c.pdf
Order this documentMOTOROLAby BD241B/DSEMICONDUCTOR TECHNICAL DATANPNBD241BComplementary Silicon PlasticBD241C*Power TransistorsPNP. . . designed for use in general purpose amplifier and switching applications.BD242B CollectorEmitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 AdcBD242C* CollectorEmitter Sustaining Voltage VCEO(sus) = 80 V
bd241c bd242c.pdf
Order this documentMOTOROLAby BD241C/DSEMICONDUCTOR TECHNICAL DATANPNBD241C*Complementary Silicon Plastic PNPBD242BPower Transistors. . . designed for use in general purpose amplifier and switching applications.BD242C* CollectorEmitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc*Motorola Preferred Device CollectorEmitter Sustaining Voltage
bd241bfp bd242bfp.pdf
BD241BFPBD242BFPCOMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT)APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIERS3DESCRIPTION 21The BD241BFP is silicon epitaxial-base NPNtransistors mounted in TO-220FP fully moldedTO-220FPisol
bd242cg.pdf
BD241C (NPN),BD242B (PNP),BD242C (PNP)Complementary SiliconPlastic Power Transistorshttp://onsemi.comDesigned for use in general purpose amplifier and switchingapplications.POWER TRANSISTORSFeaturesCOMPLEMENTARY Collector-Emitter Saturation Voltage -SILICONVCE = 1.2 Vdc (Max) @ IC = 3.0 Adc3 AMP Collector-Emitter Sustaining Voltage -80-100 VOLTSVCEO(sus)
bd242bg.pdf
BD241C (NPN),BD242B (PNP),BD242C (PNP)Complementary SiliconPlastic Power Transistorshttp://onsemi.comDesigned for use in general purpose amplifier and switchingapplications.POWER TRANSISTORSFeaturesCOMPLEMENTARY Collector-Emitter Saturation Voltage -SILICONVCE = 1.2 Vdc (Max) @ IC = 3.0 Adc3 AMP Collector-Emitter Sustaining Voltage -80-100 VOLTSVCEO(sus)
bd241c bd242b bd242c.pdf
BD241C (NPN),BD242B (PNP),BD242C (PNP)Complementary SiliconPlastic Power Transistorswww.onsemi.comDesigned for use in general purpose amplifier and switchingapplications.POWER TRANSISTORSFeaturesCOMPLEMENTARY High Current Gain - Bandwidth ProductSILICON Compact TO-220 AB Package3 AMP Epoxy Meets UL94 V-0 @ 0.125 in80-100 VOLTS These Devices are Pb-F
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
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