Справочник транзисторов. BD242

 

Биполярный транзистор BD242 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BD242
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 40 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 55 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 3 MHz
   Статический коэффициент передачи тока (hfe): 25
   Корпус транзистора: TO220

 Аналоги (замена) для BD242

 

 

BD242 Datasheet (PDF)

 ..1. Size:66K  st
bd241 bd242.pdf

BD242
BD242

BD241A/B/CBD242A/B/CCOMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD241A, BD241B and BD241C are siliconepitaxial-base NPN transistors mounted in JedecTO-220 plastic package.They are inteded for use in medium power linearand switching applications.32The complementary PNP types are BD242A,1BD2

 ..2. Size:27K  fairchild semi
bd242 a b c.pdf

BD242
BD242

BD242/A/B/CMedium Power Linear and Switching Applications Complement to BD241/A/B/C respectivelyTO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCEO Collector-Emitter Voltage: BD242 - 45 V: BD242A - 60 V: BD242B - 80 V: BD242C - 100 V VCER Collector-Emitter Vo

 ..3. Size:87K  power-innovations
bd242.pdf

BD242
BD242

BD242, BD242A, BD242B, BD242CPNP SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD241 SeriesTO-220 PACKAGE(TOP VIEW) 40 W at 25C Case Temperature 3 A Continuous Collector CurrentB 1C 2 5 A Peak Collector CurrentE 3 Customer-Specified Selections AvailablePin 2 is in ele

 ..4. Size:216K  inchange semiconductor
bd242 bd242a bd242b bd242c.pdf

BD242
BD242

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD242/A/B/CDESCRIPTIONDC Current Gain -h = 25(Min)@ I = -1.0AFE CCollector-Emitter Sustaining Voltage-: V = -45V(Min)- BD242; -60V(Min)- BD242ACEO(SUS)-80V(Min)- BD242B; -100V(Min)- BD242CComplement to Type BD241/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

 ..5. Size:119K  inchange semiconductor
bd242 a b c.pdf

BD242
BD242

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD242/A/B/C DESCRIPTION With TO-220C package Complement to type BD241/A/B/C APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS

 0.1. Size:139K  motorola
bd241b bd241c bd242b bd242c.pdf

BD242
BD242

Order this documentMOTOROLAby BD241B/DSEMICONDUCTOR TECHNICAL DATANPNBD241BComplementary Silicon PlasticBD241C*Power TransistorsPNP. . . designed for use in general purpose amplifier and switching applications.BD242B CollectorEmitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 AdcBD242C* CollectorEmitter Sustaining Voltage VCEO(sus) = 80 V

 0.2. Size:108K  motorola
bd241c bd242c.pdf

BD242
BD242

Order this documentMOTOROLAby BD241C/DSEMICONDUCTOR TECHNICAL DATANPNBD241C*Complementary Silicon Plastic PNPBD242BPower Transistors. . . designed for use in general purpose amplifier and switching applications.BD242C* CollectorEmitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc*Motorola Preferred Device CollectorEmitter Sustaining Voltage

 0.3. Size:29K  st
bd241bfp bd242bfp.pdf

BD242
BD242

BD241BFPBD242BFPCOMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT)APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIERS3DESCRIPTION 21The BD241BFP is silicon epitaxial-base NPNtransistors mounted in TO-220FP fully moldedTO-220FPisol

 0.4. Size:140K  onsemi
bd242cg.pdf

BD242
BD242

BD241C (NPN),BD242B (PNP),BD242C (PNP)Complementary SiliconPlastic Power Transistorshttp://onsemi.comDesigned for use in general purpose amplifier and switchingapplications.POWER TRANSISTORSFeaturesCOMPLEMENTARY Collector-Emitter Saturation Voltage -SILICONVCE = 1.2 Vdc (Max) @ IC = 3.0 Adc3 AMP Collector-Emitter Sustaining Voltage -80-100 VOLTSVCEO(sus)

 0.5. Size:140K  onsemi
bd242bg.pdf

BD242
BD242

BD241C (NPN),BD242B (PNP),BD242C (PNP)Complementary SiliconPlastic Power Transistorshttp://onsemi.comDesigned for use in general purpose amplifier and switchingapplications.POWER TRANSISTORSFeaturesCOMPLEMENTARY Collector-Emitter Saturation Voltage -SILICONVCE = 1.2 Vdc (Max) @ IC = 3.0 Adc3 AMP Collector-Emitter Sustaining Voltage -80-100 VOLTSVCEO(sus)

 0.6. Size:238K  onsemi
bd241c bd242b bd242c.pdf

BD242
BD242

BD241C (NPN),BD242B (PNP),BD242C (PNP)Complementary SiliconPlastic Power Transistorswww.onsemi.comDesigned for use in general purpose amplifier and switchingapplications.POWER TRANSISTORSFeaturesCOMPLEMENTARY High Current Gain - Bandwidth ProductSILICON Compact TO-220 AB Package3 AMP Epoxy Meets UL94 V-0 @ 0.125 in80-100 VOLTS These Devices are Pb-F

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