BD242D datasheet и подбор замены

 9.1. Size:139K  motorola
 bd241b bd241c bd242b bd242c.pdf 

Order this document MOTOROLA by BD241B/D SEMICONDUCTOR TECHNICAL DATA NPN BD241B Complementary Silicon Plastic BD241C* Power Transistors PNP . . . designed for use in general purpose amplifier and switching applications. BD242B Collector Emitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc BD242C* Collector Emitter Sustaining Voltage VCEO(sus) = 80 V

 9.2. Size:108K  motorola
 bd241c bd242c.pdf 

 9.3. Size:66K  st
 bd241 bd242.pdf 

BD241A/B/C BD242A/B/C COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. 3 2 The complementary PNP types are BD242A, 1 BD2

 9.4. Size:29K  st
 bd241bfp bd242bfp.pdf 

BD241BFP BD242BFP COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIERS 3 DESCRIPTION 2 1 The BD241BFP is silicon epitaxial-base NPN transistors mounted in TO-220FP fully molded TO-220FP isol

 9.5. Size:27K  fairchild semi
 bd242 a b c.pdf 

BD242/A/B/C Medium Power Linear and Switching Applications Complement to BD241/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage BD242 - 45 V BD242A - 60 V BD242B - 80 V BD242C - 100 V VCER Collector-Emitter Vo

 9.6. Size:140K  onsemi
 bd242cg.pdf 

BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http //onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS Features COMPLEMENTARY Collector-Emitter Saturation Voltage - SILICON VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc 3 AMP Collector-Emitter Sustaining Voltage - 80-100 VOLTS VCEO(sus)

 9.7. Size:140K  onsemi
 bd242bg.pdf 

BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http //onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS Features COMPLEMENTARY Collector-Emitter Saturation Voltage - SILICON VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc 3 AMP Collector-Emitter Sustaining Voltage - 80-100 VOLTS VCEO(sus)

 9.8. Size:238K  onsemi
 bd241c bd242b bd242c.pdf 

BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors www.onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS Features COMPLEMENTARY High Current Gain - Bandwidth Product SILICON Compact TO-220 AB Package 3 AMP Epoxy Meets UL94 V-0 @ 0.125 in 80-100 VOLTS These Devices are Pb-F

 9.9. Size:87K  power-innovations
 bd242.pdf 

BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD241 Series TO-220 PACKAGE (TOP VIEW) 40 W at 25 C Case Temperature 3 A Continuous Collector Current B 1 C 2 5 A Peak Collector Current E 3 Customer-Specified Selections Available Pin 2 is in ele

 9.10. Size:216K  inchange semiconductor
 bd242 bd242a bd242b bd242c.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor BD242/A/B/C DESCRIPTION DC Current Gain -h = 25(Min)@ I = -1.0A FE C Collector-Emitter Sustaining Voltage- V = -45V(Min)- BD242; -60V(Min)- BD242A CEO(SUS) -80V(Min)- BD242B; -100V(Min)- BD242C Complement to Type BD241/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

 9.11. Size:119K  inchange semiconductor
 bd242 a b c.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD242/A/B/C DESCRIPTION With TO-220C package Complement to type BD241/A/B/C APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS