BD246D datasheet, аналоги, основные параметры

Наименование производителя: BD246D

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 80 W

Макcимально допустимое напряжение коллектор-база (Ucb): 160 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 15 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 3 MHz

Статический коэффициент передачи тока (hFE): 15

Корпус транзистора: TO218

 Аналоги (замена) для BD246D

- подборⓘ биполярного транзистора по параметрам

 

BD246D даташит

 9.1. Size:85K  bourns
 bd246-a-b-c.pdf pdf_icon

BD246D

BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE BD245 Series (TOP VIEW) 80 W at 25 C Case Temperature B 1 10 A Continuous Collector Current C 2 15 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maxi

 9.2. Size:91K  power-innovations
 bd246.pdf pdf_icon

BD246D

BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the SOT-93 PACKAGE BD245 Series (TOP VIEW) 80 W at 25 C Case Temperature B 1 10 A Continuous Collector Current 15 A Peak Collector Current 2 C Customer-Specified Selections Available 3 E Pin 2 is in

 9.3. Size:217K  inchange semiconductor
 bd246 bd246a bd246b bd246c.pdf pdf_icon

BD246D

isc Silicon PNP Power Transistor BD246/A/B/C DESCRIPTION Collector Current -I = -10A C Collector-Emitter Breakdown Voltage- V = -45V(Min)- BD246; -60V(Min)- BD246A (BR)CEO -80V(Min)- BD246B; -100V(Min)- BD246C Complement to Type BD245/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose

 9.4. Size:210K  inchange semiconductor
 bd246 a b c.pdf pdf_icon

BD246D

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD246/A/B/C DESCRIPTION Collector Current -IC= -10A Collector-Emitter Breakdown Voltage- V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C Complement to Type BD245/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: BD245C, BD245D, BD245E, BD245F, BD246, BD246A, BD246B, BD246C, C3198, BD246E, BD246F, BD249, BD249A, BD249B, BD249C, BD249D, BD249E