Справочник транзисторов. BD681

 

Биполярный транзистор BD681 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BD681
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 40 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 4 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 1 MHz
   Статический коэффициент передачи тока (hfe): 750
   Корпус транзистора: TO126

 Аналоги (замена) для BD681

 

 

BD681 Datasheet (PDF)

 ..1. Size:112K  motorola
bd675 bd675a bd677 bd677a bd679 bd679a bd681 bd675 bd677 bd679 bd681.pdf

BD681 BD681

Order this documentMOTOROLAby BD675/DSEMICONDUCTOR TECHNICAL DATABD675BD675APlastic Medium-PowerBD677Silicon NPN DarlingtonsBD677A. . . for use as output devices in complementary generalpurpose amplifier applica-BD679tions. High DC Current Gain BD679AhFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic ConstructionBD681* BD675, 675A, 677, 677A,

 ..2. Size:87K  st
bd677a bd679a bd681 bd678a bd680a bd682.pdf

BD681 BD681

BD677/A/679/A/681BD678/A/680/A/682COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATION LINEAR AND SWITCHING INDUSTRIAL12EQUIPMENT3SOT-32DESCRIPTIONThe BD677, BD677A, BD679, BD679A andBD681 are silicon epi

 ..3. Size:41K  st
bd677 bd677a bd678 bd678a bd679 bd679a bd680 bd680a bd681 bd682.pdf

BD681 BD681

BD677/A/679/A681BD678/A/680/A/682COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe BD677, BD677A, BD679, BD679A andBD681 are silicon epitaxial-base NPN powertransistors in monolithic Darlington configurationmounted in Jedec SOT-32 plastic package.They are intended for use in medium power linarand switching applications12

 ..4. Size:39K  fairchild semi
bd675a bd677a bd679a bd681.pdf

BD681 BD681

BD675A/677A/679A/681Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respectivelyTO-1261NPN Epitaxial Silicon Transistor1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD675A 45 V : BD677A 60 V : B

 ..5. Size:88K  comset
bd675 bd677 bd679 bd681.pdf

BD681 BD681

NPN BD675/A - BD677/A - BD679/A - BD681/A SILICON DARLINGTON POWER TRANSISTORSThe BD675/A-BD677/A-BD679/A-BD681/A are NPN They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. PNP complements are BD676/A-BD678/A-BD680/A-BD682/A ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitB

 ..6. Size:176K  cdil
bd675 bd677 bd679 bd681 bd683.pdf

BD681 BD681

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER DARLINGTON TRANSISTORS BD675, BD675ABD677, BD677ABD679, BD679ABD681, BD683TO126 Plastic PackageECBComplementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD675 677 679 681 683 UNITSBD675A 677A 679AVCBOCollector B

 ..7. Size:117K  inchange semiconductor
bd675a bd677a bd679a bd681.pdf

BD681 BD681

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD675A/677A/679A/681 DESCRIPTION With TO-126 package Complement to type BD676A/678A/680A/682 DARLINGTON APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25

 ..8. Size:189K  inchange semiconductor
bd681.pdf

BD681 BD681

isc Silicon NPN Darlington Power Transistor BD681DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 100V(BR)CEODC Current Gain: h = 750(Min) @ I = 1.5 AFE CComplement to Type BD682Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in complementarygeneral-purpose amplifier ap

 0.1. Size:103K  onsemi
bd681g.pdf

BD681 BD681

BD675, BD675A, BD677,BD677A, BD679, BD679A,BD681BD681 is a Preferred DevicePlastic Medium-PowerSilicon NPN Darlingtonshttp://onsemi.comThis series of plastic, medium-power silicon NPN Darlingtontransistors can be used as output devices in complementary4.0 AMPERESgeneral-purpose amplifier applications.POWER TRANSISTORSFeaturesNPN SILICON High DC Current Gain:60,

 0.2. Size:106K  comset
bd681a.pdf

BD681 BD681

NPN BD675/A - BD677/A - BD679/A - BD681/A SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. PNP complements are BD676/A - BD678/A - BD680/A - BD682/A Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS

 0.3. Size:141K  shantou-huashan
hbd681.pdf

BD681 BD681

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD681 APPLICATIONS Medium Power Linear switching. ABSOLUTE MAXIMUM RATINGSTa=25 TO-126F TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector DissipationTc=25

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History: KT683B | IMB2AFRA

 

 
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