Биполярный транзистор BD707 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BD707
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 60 W
Макcимально допустимое напряжение коллектор-база (Ucb): 70 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO66
BD707 Datasheet (PDF)
bd707 bd708 bd709 bd711 bd712.pdf
BD707/709/711BD708/712COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY PNP - NPN DEVICES APPLICATION LINEAR AND SWITCHING INDUSTRIALEQUIPMENT DESCRIPTION The BD707, BD709 and BD711 are siliconEpitaxial-Base NPN power transistors in Jedec32TO-220 plastic package. They are intented for1use in power linear and switching applications.The BD707 and BD711 compl
bd707 bd708 bd709 bd710 bd711 bd712.pdf
BD707/709/711BD708/710/712COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICESAPPLICATION LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTIONThe BD707, BD709, and BD711 are silicon32epitaxial-base NPN power transistors in Jedec1TO-220 plastic package, intented for use inpower linear and switching applications.TO
bd707.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR POWER TRANSISTOR BD707 TO-220Plastic PackageFor use in Power Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCER 60 VVCEO Collector Emitter Voltage 60 VVEBOEmitter B
bd707 bd709 bd711.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD707 BD709 BD711 DESCRIPTION With TO-220C package The BD707 and BD711are respectively complement to type BD708 and BD712 APPLICATIONS Intented for use in power linear and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute m
bd707.pdf
isc Silicon NPN Power Transistor BD707DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min.)CEO(SUS)Complement to Type BD708Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power linear and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
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