Биполярный транзистор BD744E
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: BD744E
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 90
W
Макcимально допустимое напряжение коллектор-база (Ucb): 160
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 15
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 5
MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора:
TO220
Аналоги (замена) для BD744E
BD744E
Datasheet (PDF)
9.1. Size:86K bourns
bd744-a-b-c.pdf 
BD744, BD744A, BD744B, BD744CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD743 SeriesTO-220 PACKAGE(TOP VIEW) 90 W at 25C Case Temperature 15 A Continuous Collector CurrentB 1 20 A Peak Collector CurrentC 2 Customer-Specified Selections Available 3EPin 2 is in electrical contact with the mounting base.MDTRACAabsolute maxim
9.2. Size:215K inchange semiconductor
bd744a.pdf 
isc Silicon PNP Power Transistor BD744ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 90W@ I = 25C C15A Continuous Collector CurrentComplement to Type BD743AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifie
9.3. Size:213K inchange semiconductor
bd744b.pdf 
isc Silicon PNP Power Transistor BD744BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 90W@ I = 25C C15A Continuous Collector CurrentComplement to Type BD743BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifie
9.4. Size:212K inchange semiconductor
bd744c.pdf 
isc Silicon PNP Power Transistor BD744CDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOCollector Power Dissipation-: P = 90W@ I = 25C C15A Continuous Collector CurrentComplement to Type BD743CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifi
9.5. Size:212K inchange semiconductor
bd744.pdf 
isc Silicon PNP Power Transistor BD744DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOCollector Power Dissipation-: P = 90W@ I = 25C C15A Continuous Collector CurrentComplement to Type BD743Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier
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