Биполярный транзистор BDT30 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BDT30
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO220
BDT30 Datasheet (PDF)
bdt30 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30/A/B/C DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= -0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)- BDT30B; -100V(Min)- BDT30C Complement to Type BDT29/A/B/C APPLICATIONS Designed for use in output stages of audio and tele
bdt30 bdt30a bdt30b bdt30c.pdf
isc Silicon PNP Power Transistors BDT30/A/B/CDESCRIPTIONDC Current Gain -h = 40(Min)@ I = -0.4AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT30; -60V(Min)- BDT30ACEO(SUS)-80V(Min)- BDT30B; -100V(Min)- BDT30CComplement to Type BDT29/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use i
bdt30f af bf cf df.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= -0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)- BDT30DF Complement to Type BDT29F/AF/BF/CF/DF APPLICATIONS Designed fo
bdt30f bdt30af bdt30bf bdt30cf bdt30df.pdf
isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DFDESCRIPTIONDC Current Gain -h = 40(Min)@ I = -0.4AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT30F; -60V(Min)- BDT30AFCEO(SUS)-80V(Min)- BDT30BF; -100V(Min)- BDT30CF-120V(Min)- BDT30DFComplement to Type BDT29F/AF/BF/CF/DFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operat
Другие транзисторы... BDT29A , BDT29AF , BDT29B , BDT29BF , BDT29C , BDT29CF , BDT29DF , BDT29F , C945 , BDT30A , BDT30AF , BDT30B , BDT30BF , BDT30C , BDT30CF , BDT30DF , BDT30F .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050