BDT41BF - описание и поиск аналогов

 

BDT41BF. Аналоги и основные параметры

Наименование производителя: BDT41BF

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 20 W

Макcимально допустимое напряжение коллектор-база (Ucb): 120 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V

Макcимальный постоянный ток коллектора (Ic): 6 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 3 MHz

Статический коэффициент передачи тока (hFE): 15

Корпус транзистора: TO220F

 Аналоги (замена) для BDT41BF

- подборⓘ биполярного транзистора по параметрам

 

BDT41BF даташит

 ..1. Size:214K  inchange semiconductor
bdt41f bdt41af bdt41bf bdt41cf.pdfpdf_icon

BDT41BF

isc Silicon NPN Power Transistors BDT41F/AF/BF/CF DESCRIPTION DC Current Gain -h = 30(Min)@ I = 0.3A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min)- BDT41F; 60V(Min)- BDT41AF CEO(SUS) 80V(Min)- BDT41BF; 100V(Min)- BDT41CF Complement to Type BDT42F/AF/BF/CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed fo

 8.1. Size:214K  inchange semiconductor
bdt41 bdt41a bdt41b bdt41c.pdfpdf_icon

BDT41BF

isc Silicon NPN Power Transistors BDT41/A/B/C DESCRIPTION DC Current Gain -h = 30(Min)@ I = 0.3A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min)- BDT41; 60V(Min)- BDT41A CEO(SUS) 80V(Min)- BDT41B; 100V(Min)- BDT41C Complement to Type BDT42/42A/42B/42C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use

 9.1. Size:107K  inchange semiconductor
bdt41f-af-bf-cf bdt41f af bf cf.pdfpdf_icon

BDT41BF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT41F/AF/BF/CF DESCRIPTION DC Current Gain -hFE = 30(Min)@ IC= 0.3A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 40V(Min)- BDT41F; 60V(Min)- BDT41AF 80V(Min)- BDT41BF; 100V(Min)- BDT41CF Complement to Type BDT42F/AF/BF/CF APPLICATIONS Designed for use in general purpose amplifer

 9.2. Size:158K  inchange semiconductor
bdt41 a b c.pdfpdf_icon

BDT41BF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT41/A/B/C DESCRIPTION DC Current Gain -hFE = 30(Min)@ IC= 0.3A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 40V(Min)- BDT41; 60V(Min)- BDT41A 80V(Min)- BDT41B; 100V(Min)- BDT41C Complement to Type BDT42/42A/42B/42C APPLICATIONS Designed for use in general purpose amplifer and sw

Другие транзисторы: BDT32C, BDT32CF, BDT32DF, BDT32F, BDT41, BDT41A, BDT41AF, BDT41B, 2SC2073, BDT41C, BDT41CF, BDT41F, BDT42, BDT42A, BDT42AF, BDT42B, BDT42BF

 

 

 

 

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