Справочник транзисторов. BDT41C

 

Биполярный транзистор BDT41C - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BDT41C
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 65 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 140 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V
   Макcимальный постоянный ток коллектора (Ic): 6 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 3 MHz
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: TO220

 Аналоги (замена) для BDT41C

 

 

BDT41C Datasheet (PDF)

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bdt41 bdt41a bdt41b bdt41c.pdf

BDT41C
BDT41C

isc Silicon NPN Power Transistors BDT41/A/B/CDESCRIPTIONDC Current Gain -h = 30(Min)@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT41; 60V(Min)- BDT41ACEO(SUS)80V(Min)- BDT41B; 100V(Min)- BDT41CComplement to Type BDT42/42A/42B/42CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use

 0.1. Size:214K  inchange semiconductor
bdt41f bdt41af bdt41bf bdt41cf.pdf

BDT41C
BDT41C

isc Silicon NPN Power Transistors BDT41F/AF/BF/CFDESCRIPTIONDC Current Gain -h = 30(Min)@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT41F; 60V(Min)- BDT41AFCEO(SUS)80V(Min)- BDT41BF; 100V(Min)- BDT41CFComplement to Type BDT42F/AF/BF/CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned fo

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bdt41f-af-bf-cf bdt41f af bf cf.pdf

BDT41C
BDT41C

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT41F/AF/BF/CF DESCRIPTIONDC Current Gain -hFE = 30(Min)@ IC= 0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT41F; 60V(Min)- BDT41AF 80V(Min)- BDT41BF; 100V(Min)- BDT41CF Complement to Type BDT42F/AF/BF/CF APPLICATIONS Designed for use in general purpose amplifer

 9.2. Size:158K  inchange semiconductor
bdt41 a b c.pdf

BDT41C
BDT41C

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT41/A/B/C DESCRIPTIONDC Current Gain -hFE = 30(Min)@ IC= 0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT41; 60V(Min)- BDT41A 80V(Min)- BDT41B; 100V(Min)- BDT41C Complement to Type BDT42/42A/42B/42C APPLICATIONS Designed for use in general purpose amplifer and sw

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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