BDT41C. Аналоги и основные параметры
Наименование производителя: BDT41C
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 65 W
Макcимально допустимое напряжение коллектор-база (Ucb): 140 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V
Макcимальный постоянный ток коллектора (Ic): 6 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hFE): 15
Корпус транзистора: TO220
Аналоги (замена) для BDT41C
- подборⓘ биполярного транзистора по параметрам
BDT41C даташит
bdt41 bdt41a bdt41b bdt41c.pdf
isc Silicon NPN Power Transistors BDT41/A/B/C DESCRIPTION DC Current Gain -h = 30(Min)@ I = 0.3A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min)- BDT41; 60V(Min)- BDT41A CEO(SUS) 80V(Min)- BDT41B; 100V(Min)- BDT41C Complement to Type BDT42/42A/42B/42C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use
bdt41f bdt41af bdt41bf bdt41cf.pdf
isc Silicon NPN Power Transistors BDT41F/AF/BF/CF DESCRIPTION DC Current Gain -h = 30(Min)@ I = 0.3A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min)- BDT41F; 60V(Min)- BDT41AF CEO(SUS) 80V(Min)- BDT41BF; 100V(Min)- BDT41CF Complement to Type BDT42F/AF/BF/CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed fo
bdt41f-af-bf-cf bdt41f af bf cf.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT41F/AF/BF/CF DESCRIPTION DC Current Gain -hFE = 30(Min)@ IC= 0.3A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 40V(Min)- BDT41F; 60V(Min)- BDT41AF 80V(Min)- BDT41BF; 100V(Min)- BDT41CF Complement to Type BDT42F/AF/BF/CF APPLICATIONS Designed for use in general purpose amplifer
bdt41 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT41/A/B/C DESCRIPTION DC Current Gain -hFE = 30(Min)@ IC= 0.3A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 40V(Min)- BDT41; 60V(Min)- BDT41A 80V(Min)- BDT41B; 100V(Min)- BDT41C Complement to Type BDT42/42A/42B/42C APPLICATIONS Designed for use in general purpose amplifer and sw
Другие транзисторы: BDT32CF, BDT32DF, BDT32F, BDT41, BDT41A, BDT41AF, BDT41B, BDT41BF, S9014, BDT41CF, BDT41F, BDT42, BDT42A, BDT42AF, BDT42B, BDT42BF, BDT42C
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Список транзисторов
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