Справочник транзисторов. BDT41CF

 

Биполярный транзистор BDT41CF Даташит. Аналоги


   Наименование производителя: BDT41CF
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 20 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 140 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V
   Макcимальный постоянный ток коллектора (Ic): 6 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 3 MHz
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: TO220F
 

 Аналог (замена) для BDT41CF

   - подбор ⓘ биполярного транзистора по параметрам

 

BDT41CF Datasheet (PDF)

 ..1. Size:214K  inchange semiconductor
 bdt41f bdt41af bdt41bf bdt41cf.pdf pdf_icon

BDT41CF

isc Silicon NPN Power Transistors BDT41F/AF/BF/CFDESCRIPTIONDC Current Gain -h = 30(Min)@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT41F; 60V(Min)- BDT41AFCEO(SUS)80V(Min)- BDT41BF; 100V(Min)- BDT41CFComplement to Type BDT42F/AF/BF/CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned fo

 8.1. Size:214K  inchange semiconductor
 bdt41 bdt41a bdt41b bdt41c.pdf pdf_icon

BDT41CF

isc Silicon NPN Power Transistors BDT41/A/B/CDESCRIPTIONDC Current Gain -h = 30(Min)@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)- BDT41; 60V(Min)- BDT41ACEO(SUS)80V(Min)- BDT41B; 100V(Min)- BDT41CComplement to Type BDT42/42A/42B/42CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use

 9.1. Size:107K  inchange semiconductor
 bdt41f-af-bf-cf bdt41f af bf cf.pdf pdf_icon

BDT41CF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT41F/AF/BF/CF DESCRIPTIONDC Current Gain -hFE = 30(Min)@ IC= 0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT41F; 60V(Min)- BDT41AF 80V(Min)- BDT41BF; 100V(Min)- BDT41CF Complement to Type BDT42F/AF/BF/CF APPLICATIONS Designed for use in general purpose amplifer

 9.2. Size:158K  inchange semiconductor
 bdt41 a b c.pdf pdf_icon

BDT41CF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT41/A/B/C DESCRIPTIONDC Current Gain -hFE = 30(Min)@ IC= 0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT41; 60V(Min)- BDT41A 80V(Min)- BDT41B; 100V(Min)- BDT41C Complement to Type BDT42/42A/42B/42C APPLICATIONS Designed for use in general purpose amplifer and sw

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы... BDT32DF , BDT32F , BDT41 , BDT41A , BDT41AF , BDT41B , BDT41BF , BDT41C , BC327 , BDT41F , BDT42 , BDT42A , BDT42AF , BDT42B , BDT42BF , BDT42C , BDT42CF .

History: 2SC733O | MMBT2904

 

 
Back to Top

 


 
.