BDT64B - аналоги, параметры транзистора - Справочник транзисторов

BDT64B даташит

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isc Silicon PNP Darlington Power Transistor BDT64/A/B/C DESCRIPTION Collector Current -I = -12A C High DC Current Gain-h = 1000(Min)@ I = -5A FE C Complement to Type BDT65/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(

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isc Silicon PNP Darlington Power Transistor BDT64F/AF/BF/CF DESCRIPTION Collector Current -I = -12A C High DC Current Gain-h = 1000(Min)@ I = -5A FE C Complement to Type BDT65F/AF/BF/CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM

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9.2. Size:167K inchange semiconductor
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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDT64/A/B/C DESCRIPTION Collector Current -IC= -12A High DC Current Gain-hFE= 1000(Min)@ IC= -5A Complement to Type BDT65/A/B/C APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE U