Справочник транзисторов. BDT64B

 

Биполярный транзистор BDT64B - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BDT64B
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 125 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимальный постоянный ток коллектора (Ic): 12 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 20 MHz
   Статический коэффициент передачи тока (hfe): 2000
   Корпус транзистора: TO220

 Аналоги (замена) для BDT64B

 

 

BDT64B Datasheet (PDF)

 ..1. Size:201K  inchange semiconductor
bdt64 bdt64a bdt64b bdt64c.pdf

BDT64B
BDT64B

isc Silicon PNP Darlington Power Transistor BDT64/A/B/CDESCRIPTIONCollector Current -I = -12ACHigh DC Current Gain-h = 1000(Min)@ I = -5AFE CComplement to Type BDT65/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purposeamplifier applicationsABSOLUTE MAXIMUM RATINGS(

 0.1. Size:203K  inchange semiconductor
bdt64f bdt64af bdt64bf bdt64cf.pdf

BDT64B
BDT64B

isc Silicon PNP Darlington Power Transistor BDT64F/AF/BF/CFDESCRIPTIONCollector Current -I = -12ACHigh DC Current Gain-h = 1000(Min)@ I = -5AFE CComplement to Type BDT65F/AF/BF/CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purposeamplifier applicationsABSOLUTE MAXIMUM

 9.1. Size:478K  no
bdt64.pdf

BDT64B
BDT64B

 9.2. Size:167K  inchange semiconductor
bdt64 a b c.pdf

BDT64B
BDT64B

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDT64/A/B/C DESCRIPTION Collector Current -IC= -12A High DC Current Gain-hFE= 1000(Min)@ IC= -5A Complement to Type BDT65/A/B/C APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE U

 9.3. Size:159K  inchange semiconductor
bdt64f af bf cf.pdf

BDT64B
BDT64B

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDT64F/AF/BF/CF DESCRIPTION Collector Current -IC= -12A High DC Current Gain-hFE= 1000(Min)@ IC= -5A Complement to Type BDT65F/AF/BF/CF APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER

Другие транзисторы... BDT63BF , BDT63C , BDT63CF , BDT63F , BDT63-TO63 , BDT64 , BDT64A , BDT64AF , TIP36C , BDT64BF , BDT64C , BDT64CF , BDT64F , BDT65 , BDT65A , BDT65AF , BDT65B .

 

 
Back to Top