Биполярный транзистор BDV64B - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BDV64B
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 125 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 12 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 400 pf
Статический коэффициент передачи тока (hfe): 2000
Корпус транзистора: TO218
BDV64B Datasheet (PDF)
bdv64b bdv65b.pdf
Order this documentMOTOROLAby BDV65B/DSEMICONDUCTOR TECHNICAL DATANPNBDV65BPNPComplementary Silicon PlasticBDV64BPower Darlingtons. . . for use as output devices in complementary general purpose amplifier applica-tions.DARLINGTONS High DC Current Gain10 AMPERESHFE = 1000 (min.) @ 5 AdcCOMPLEMENTARY Monolithi
bdv64 bdv64a bdv64b bdv64c.pdf
isc Silicon PNP Darlington Power Transistor BDV64/A/B/CDESCRIPTIONCollector Current -I = -12ACCollector-Emitter Saturation Voltage-: V = -2.0V(Max.)@ I = -5ACE(sat) CComplement to Type BDV65/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applic
bdv64bg.pdf
BDV65B (NPN),BDV64B (PNP)Complementary SiliconPlastic Power Darlingtons. . . for use as output devices in complementary general purposeamplifier applications.http://onsemi.comFeatures10 AMPERE DARLINGTON High DC Current Gain - HFE = 1000 (min) @ 5 AdcCOMPLEMENTARY SILICON Monolithic Construction with Built-in Base Emitter Shunt ResistorsPOWER TRANSISTORS These
bdv64 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDV64/A/B/C DESCRIPTION Collector Current -IC= -12A Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -5A Complement to Type BDV65/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T
bdv64 64a 64b 64c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDV64/64A/64B/64C DESCRIPTION With TO-3PN package Complement to type BDV65/65A/65B/65C DARLINGTON High DC current gain APPLICATIONS For use in general purpose amplifier applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050