BDW23C - аналоги, параметры транзистора - Справочник транзисторов

BDW23C даташит

..1. Size:214K inchange semiconductor
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isc Silicon NPN Darlington Power Transistor BDW23/A/B/C DESCRIPTION Collector Current -I = 6A C High DC Current Gain-h = 750(Min)@ I = 2A FE C Complement to Type BDW24/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

9.1. Size:38K fairchild semi
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BDW23/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Darlington TR Complement to BDW24, BDW24A, BDW24B and BDW24C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BDW23 45 V BDW23A 60 V BDW23B 80 V BDW23C

9.2. Size:116K inchange semiconductor
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW23/A/B/C DESCRIPTION Collector Current -IC= 6A High DC Current Gain-hFE= 750(Min)@ IC= 2A Complement to Type BDW24/A/B/C APPLICATIONS Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT BDW23 45 BDW23A 6

9.3. Size:169K inchange semiconductor
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