Order this documentMOTOROLAby BDW42/DSEMICONDUCTOR TECHNICAL DATANPNBDW42*Darlington ComplementaryPNPSilicon Power TransistorsBDW46. . . designed for general purpose and low speed switching applications. High DC Current Gain hFE = 2500 (typ.) @ IC = 5.0 Adc. BDW47* Collector Emitter Sustaining Voltage @ 30 mAdc:*Motorola Preferred DeviceVCEO(sus) = 80 Vdc (

isc Silicon NPN Darlington Power Transistor BDW42DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 1000(Min) @I = 5AFE CLow Collector Saturation Voltage: V = 2.0V(Max.)@ I = 5.0ACE(sat) C= 3.0V(Max.)@ I = 10ACComplement to Type BDW47Minimum Lot-to-Lot variations for robust deviceperformance and reliable opera

BDW42G - NPN, BDW46G,BDW47G - PNPDarlington ComplementarySilicon Power TransistorsThis series of plastic, medium-power silicon NPN and PNPDarlington transistors are designed for general purpose and low speedhttp://onsemi.comswitching applications.Features15 AMP DARLINGTON High DC Current Gain - hFE = 2500 (typ) @ IC = 5.0 Adc.COMPLEMENTARY SILICON Collector Emitter

ST BDW42 NPN Silicon Planar Darlington Power Transistors General Purpose and Low Speed Switching Application TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Emitter Voltage VCEO 100 VCollector Base Voltage VCBO 100 V Emitter Base Voltage VEBO 5 VCollector Current Continuous IC 15 A Base Currentt IB 0.5 AOTotal Powe