Биполярный транзистор BDW84C - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BDW84C
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 150 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 1 MHz
Статический коэффициент передачи тока (hfe): 750
Корпус транзистора: TO218
BDW84C Datasheet (PDF)
bdw84c.pdf
isc Product Specificationisc Silicon PNP Darlington Power Transistor BDW84CDESCRIPTIONCollector Current -I = -15ACHigh DC Current Gain-h = 750(Min)@ I = -6AFE CComplement to Type BDW83CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsABSOLUTE
bdw84 bdw84a bdw84b bdw84c.pdf
isc Silicon PNP Darlington Power Transistor BDW84/A/B/CDESCRIPTIONCollector Current -I = -15ACHigh DC Current Gain-h = 750(Min)@ I = -6AFE CComplement to Type BDW83/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsABSOLUTE MAXIMUM RATINGS(T
bdw83 bdw84.pdf
BDW83CBDW84CCOMPLEMENTARY SILICON POWER DARLINGTONTRANSISTORS BDW83C IS A SGS-THOMSON PREFERREDSALESTYPE COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN APPLICATIONS 3 LINEAR AND SWITCHING INDUSTRIAL2EQUIPMENT1DESCRIPTION TO-218The BDW83C is a silicon epitaxial-base NPNpower monolithic Darlington transis
bdw84d.pdf
isc Silicon PNP Darlington Power Transistor BDW84DDESCRIPTIONCollector Current -I = -15ACHigh DC Current Gain-h = 750(Min)@ I = -6AFE CComplement to Type BDW83DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
bdw84 84a 84b 84c 84d.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDW84/84A/84B/84C/84D DESCRIPTION With TO-3PN package Complement to type BDW83/83A/83B/83C/83D DARLINGTON High DC current gain APPLICATIONS For use in power linear and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified ou
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050