Биполярный транзистор BDW93C - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BDW93C
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 12 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 20 MHz
Статический коэффициент передачи тока (hfe): 15000
Корпус транзистора: TO220
BDW93C Datasheet (PDF)
bdw93 bdw93a bdw93b bdw93c.pdf
isc Silicon NPN Power Transistor BDW93/A/B/CDESCRIPTIONCollector Current -I = 12ACCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BDW93; 60V(Min)- BDW93ACEO(SUS)80V(Min)- BDW93B; 100V(Min)- BDW93CComplement to Type BDW94/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for hammer drivers, audio ampl
bdw93c.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDW93CDESCRIPTIONWith TO-220 packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to Type BDW94CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectroni
bdw93cfp bdw94cfp.pdf
BDW93CFPBDW94CFPCOMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES MONOLITHIC DARLINGTONCONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE FULLY MOLDED INSULATED PACKAGE 2000 V DC INSULATION (U.L. COMPLIANT)321APPLICATIONS LINEAR AND SWITCHING INDUSTRIALT0-220FPEQUIPMENT
bdw93cf.pdf
BDW93CFHammer Drivers, Audio Amplifiers Applications Power Darlington TR Complement to BDW94CF respectivelyTO-220F11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V IC Collector Current (DC) 12 A I
hbdw93c.pdf
NPN DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW93C APPLICATIONS Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector DissipationTc=25
bdw93cfp.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDW93CFPDESCRIPTIONWith TO-220F packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to Type BDW94CFPMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElec
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