BDW94A - описание и поиск аналогов

INCHANGE Semiconductor isc Silicon PNP Power Transistor BDW94/A/B/C DESCRIPTION Collector Current -I = -12A C Collector-Emitter Sustaining Voltage- V = -45V(Min)- BDW94; -60V(Min)- BDW94A CEO(SUS) -80V(Min)- BDW94B; -100V(Min)- BDW94C Complement to Type BDW93/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed f

BDW93CFI BDW94CFI COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL 3 2 EQUIPMENT 1 DESCRIPTION ISOWATT220 The BDW93CFI, is a silicon epitaxial-base NPN transistor in monolithic

BDW93CFP BDW94CFP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE FULLY MOLDED INSULATED PACKAGE 2000 V DC INSULATION (U.L. COMPLIANT) 3 2 1 APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL T0-220FP EQUIPMENT

BDW93B/BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 DESCRIPTION 1 The BDW93B, and BDW93C are silicon epitaxial-base NPN power transistors in TO-220 monolithic Darlington config

BDW94/A/B/C Power Linear and Switching Applications Power Darlington TR Complement to BDW93, BDW93A, BDW93B and BDW93C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BDW94 - 45 V BDW94A - 60 V BDW94B - 80 V BDW94C -

January 2005 BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application Power Darlington TR Complement to BDW93 and BDW93C Respectively TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BDW94 -45 V BDW94C -100 V VCEO Collector-Emitter Voltage

July 2005 BDW94CF PNP Epitaxial Silicon Transistor Power Linear and Switching Application Power Darlington TR Complement to BDW93CF Respectively TO-220F 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V IC Collector Current (DC) -12 A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

DARLINGTON COMPLEMENTARY POWER TRANSISTORS R BDW93C/BDW94C APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES

PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW94C APPLICATIONS Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-220 Tstg Storage Temperature -65 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDW94CFP DESCRIPTION With TO-220F packaging Very high DC current gain Monolithic darlington transistor with integrated antiparallel collector-emitter diode Complement to Type BDW93CFP Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control Elec