BDX54BFI - описание и поиск аналогов

BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application 3 2 1 Audio amplifiers TO-220 Linear and switching industrial equipment Description The devices are manufactured in planar base island t

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors http //onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage -

isc Silicon PNP Darlington Power Transistor BDX54B DESCRIPTION Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(sus) High DC Current Gain h = 750(Min) @I = -3A FE C Low Collector Saturation Voltage V = -2.0 V(Max) @ I = -3.0 A CE(sat) C Complement to Type BDX53B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS