Справочник транзисторов. BDX54CFI

 

Биполярный транзистор BDX54CFI Даташит. Аналоги


   Наименование производителя: BDX54CFI
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 60 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 20 MHz
   Статический коэффициент передачи тока (hfe): 750
   Корпус транзистора: TO220F
 

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BDX54CFI Datasheet (PDF)

 8.1. Size:73K  st
 bdx53b bdx53c bdx54b bdx54c.pdf pdf_icon

BDX54CFI

BDX53B - BDX53CBDX54B - BDX54CComplementary power Darlington transistorsFeatures Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diodeApplication321 Audio amplifiersTO-220 Linear and switching industrial equipmentDescriptionThe devices are manufactured in planar base island t

 8.2. Size:148K  onsemi
 bdx54cg.pdf pdf_icon

BDX54CFI

BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorshttp://onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage -

 8.3. Size:355K  onsemi
 bdx53b bdx53c bdx54b bdx54c.pdf pdf_icon

BDX54CFI

BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1

 8.4. Size:355K  onsemi
 bdx53bg bdx53cg bdx54bg bdx54cg.pdf pdf_icon

BDX54CFI

BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: BD946F

 

 
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