BDY27C - параметры, поиск аналогов, даташиты транзистора

BDY27C Datasheet (PDF)

0.1. Size:11K semelab
bdy27cx.pdf pdf_icon

BDY27CXDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 6A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

9.1. Size:258K comset
bdy26-bdy27-bdy28-183t2-184t2-185t2.pdf pdf_icon

COMSETSEMICONDUCTORSBDY26, 183 T2BDY27, 184 T2BDY28, 185 T2NPN SILICON TRANSISTORS, DIFFUSEDMESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY26, 183T2 180VCEO Collector-Emitter Voltage BDY27, 184T2 200 VBDY28, 185T2 250BDY26, 183T2 300VCBO Collector-Base Voltage BDY27, 184T2 400 VBDY28, 185T2 50

9.2. Size:11K semelab
bdy27as.pdf pdf_icon

BDY27ASDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 6A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

9.3. Size:211K inchange semiconductor
bdy27.pdf pdf_icon

isc Silicon NPN Power Transistor BDY27DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 0.6V(Max)@ I = 2ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF signal powe amplifier applications.ABSOLUTE MAXIMUM RAT

Другие транзисторы... BDY25C , BDY26 , BDY26A , BDY26B , BDY26C , BDY27 , BDY27A , BDY27B , 9014 , BDY28 , BDY28A , BDY28B , BDY28C , BDY29 , BDY34 , BDY37 , BDY37A .